Increasing the creation yield of shallow single defects in diamond by surface plasma treatment

Osterkamp, Christian; Scharpf, Jochen; Pezzagna, Sébastien; Meijer, Jan; Diemant, Thomas; Behm, R. Jürgen; Naydenov, Boris; Jelezko, Fedor

doi:10.1063/1.4829875

Cited by 30 publications

(43 citation statements)

References 25 publications

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“…The fluorine F1s peak appears at 685 eV and it is shifted by 3 eV compared to the position of the CF 4 treated samples. 20 We do not observe any oxygen peak, expected at around 532 eV, suggesting a good fluorine surface coverage. Nevertheless, from our data we cannot directly conclude that there is a fluorine monolayer on the surface.…”

Section: Plasma Treatmentmentioning

confidence: 59%

“…In our previous work 20 and in a related work, 21 it has been shown that very shallow (<5 nm) implanted NVs are stabilized if the diamond surface is treated with oxygen or CF 4 plasma. Here we report a similar effect, namely, NVs produced during the CVD process and close to the surface are not stable neither if the samples are measured directly after the growth nor after boiling them in the three acid mixture.…”

Section: Plasma Treatmentmentioning

confidence: 85%

“…We applied the procedure reported in Ref. 20. First, we hydrogenate the diamond surface by exposing the sample in hydrogen plasma for several minutes at temperature t ¼ 750 C and pressure p ¼ 20 mbar in the CVD reactor used for the growth.…”

Section: Plasma Treatmentmentioning

confidence: 99%

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Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF6 plasma treatment

Osterkamp

Lang

Scharpf

et al. 2015

Applied Physics Letters

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Section: Plasma Treatmentmentioning

confidence: 59%

Section: Plasma Treatmentmentioning

confidence: 85%

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Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF6 plasma treatment

Osterkamp

Lang

Scharpf

et al. 2015

Applied Physics Letters

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“…28 The prevailing approach is to keep the implantation energy low (< 5 keV). [24][25][26][27] It is also preferred to set the implantation dose (fluence) low (∼10 8 cm −2 ), so that single NV centers can be resolved optically. On the other hand, standard, multi-purpose ion implantation systems operate at 10 keV or higher with the dose of 10 11 cm −3 or higher, making this approach not widely available.…”

mentioning

confidence: 99%

Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Ito

Saitô

Sasaki

et al. 2017

Applied Physics Letters

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We report on an ion implantation technique utilizing a screening mask made of SiO 2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest NV density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 10 11 cm 2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of µs.Impurity doping of semiconductors is a fabrication process indispensable for the modern electronic devices, and continues to be so for quantum devices such as siliconbased single-donor spin qubits 1-3 , in which the positions of the individual donors must be controlled precisely. 4Being optically addressable and coherently controllable by microwaves, the single electronic spins associated with the negatively charged nitrogen-vacancy (NV − ) centers in diamond are playing important roles in emergent quantum technology, e.g., as a matter qubit interfacing with a flying qubit 5-8 and as a nanoscale magnetic sensor. 9-11Both applications demand that the NV centers be located close to the diamond surface. 12 For quantum network, shallow NV spins can be efficiently coupled to photons in a nanophotonic cavity.13 For magnetometry, the proximity of the NV sensor to a magnetic specimen is crucial, because their dipolar coupling strength decays as the inverse cube of the separation.So far, shallow NV centers (< 5 nm from the surface) have been created primarily by (i) nitrogen-doping during CVD growth 14-17 and (ii) N + ion implantation. 18-27The CVD approach allows the accurate control of the impurity distribution in the depth direction, whereas the doping is random in the lateral dimensions. Ironically, high-quality CVD diamond films tend to lack vacancies to pair up with nitrogen atoms; an additional process to introduce vacancies, such as electron irradiation 14 , C + ion implantation 16 , or He + ion implantation 17 , is often required, although the creation of shallow NV centers in as-grown films has also been reported. 15Ion implantation introduces both nitrogen atoms and vacancies into diamond. The lateral distributions are controllable by the use of focused ion beam 18 or an array of small apertures. 20-23The main concern is that a) Electronic mail: kitoh@appi.keio.ac.jp b) Electronic mail: e-abe@keio.jp the depth profile intrinsically has broadening approximated by a Gaussian distribution. Importantly, the ions can penetrate deep inside of the crystal lattice due to the ion channeling effect. 28 The prevailing approach is to keep the implantation energy low (< 5 keV).24-27 It is also preferred to set the implantation dose (fluence) low (∼10 8 cm −2 ), so that single NV centers can be resolved optically. On the other hand, standard, multi-purpose ion implantation systems operate at 10 keV or higher with the dos...

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“…Recent developments in materials fabrication [24,57], ion implantation [58,59], and coherent control techniques [60,61] have brought diamond magnetometers close to the threshold of single nuclear spin sensitivity. These quantum sensors have the potential to be an important tool in proteomics, as they overcome some of the challenges plaguing other experimental techniques, such as x-ray diffraction and conventional NMR.…”

Section: Discussionmentioning

confidence: 99%

Atomic-Scale Nuclear Spin Imaging Using Quantum-Assisted Sensors in Diamond

et al. 2015

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Nuclear spin imaging at the atomic level is essential for the understanding of fundamental biological phenomena and for applications such as drug discovery. The advent of novel nanoscale sensors promises to achieve the long-standing goal of single-protein, high spatial-resolution structure determination under ambient conditions. In particular, quantum sensors based on the spin-dependent photoluminescence of nitrogen-vacancy (NV) centers in diamond have recently been used to detect nanoscale ensembles of external nuclear spins. While NV sensitivity is approaching single-spin levels, extracting relevant information from a very complex structure is a further challenge since it requires not only the ability to sense the magnetic field of an isolated nuclear spin but also to achieve atomic-scale spatial resolution. Here, we propose a method that, by exploiting the coupling of the NV center to an intrinsic quantum memory associated with the nitrogen nuclear spin, can reach a tenfold improvement in spatial resolution, down to atomic scales. The spatial resolution enhancement is achieved through coherent control of the sensor spin, which creates a dynamic frequency filter selecting only a few nuclear spins at a time. We propose and analyze a protocol that would allow not only sensing individual spins in a complex biomolecule, but also unraveling couplings among them, thus elucidating local characteristics of the molecule structure.

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Increasing the creation yield of shallow single defects in diamond by surface plasma treatment

Abstract: Articles you may be interested inCreation of quantum entanglement with two separate diamond nitrogen vacancy centers coupled to a photonic molecule

Cited by 30 publications

References 25 publications

Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF6 plasma treatment

Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF6 plasma treatment

Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Atomic-Scale Nuclear Spin Imaging Using Quantum-Assisted Sensors in Diamond

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