Enhancing the spin properties of shallow implanted nitrogen vacancy centers in diamond by epitaxial overgrowth

Staudacher, T.; Ziem, Florestan; Häussler, L.; Stöhr, Rainer; Steinert, Steffen; Reinhard, Friedemann; Scharpf, Jochen; Denisenko, Andrej; Wrachtrup, Jörg

doi:10.1063/1.4767144

Cited by 57 publications

(64 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The formation of both single NV centers and ensembles of NV centers localized in diamond with high accuracy is one of the relevant tasks, the solution of which is crucial for the creation of a solid‐state medium necessary for quantum information processing, as well as for the development of a room‐temperature sensor of magnetic and electric fields with extremely high sensitivity . In many experiments, the method of ion implantation was used to obtain localized NV centers, which, has a number of limitations, despite the convenience of creating single NV centers, such as the uncertainty in depth distribution of NV centers, shorter spin‐coherence times due to local lattice deformation. Unlike ion implantation, NV centers localized in a thin layer of nanometer thickness can be obtained by delta doping with nitrogen in the process of CVD diamond growth .…”

Section: Introductionmentioning

confidence: 99%

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.

show abstract

Section: Introductionmentioning

confidence: 99%

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The high spatial resolution is achieved thanks to the atomic size of the NV center and the ability for positioning it with high accuracy [5,[9][10][11][12][18][19][20] in nanoscale diamond. Besides its application in signal transduction and precision measurement, the proposed hybrid system can be exploited to couple the NV-center spin to mechanical oscillations, and significantly enhance the coherent coupling between these two degrees of freedom.…”

mentioning

confidence: 99%

“…The growth of ultrapure isotopically modified diamond and subsequent nitrogen implantation make it possible to engineer NV centers close to the diamond surface [9][10][11][12] and therefore in close proximity to the piezomagnetic material layer. This allows for the detection of changes in the stray magnetic field [3,[13][14][15][16][17] generated by the piezomagnetic material due to an external stress.…”

mentioning

confidence: 99%

Hybrid sensors based on colour centres in diamond and piezoactive layers

Cai¹,

Jelezko²,

Plenio³

2014

Nat Commun

View full text Add to dashboard Cite

The ability to measure weak signals such as pressure, force, electric field, and temperature with nanoscale devices and high spatial resolution offers a wide range of applications in fundamental and applied sciences. Here we present a proposal for a hybrid device composed of thin film layers of diamond with color centers implanted and piezo-active elements for the transduction and measurement of a wide variety of physical signals. The magnetic response of a piezomagnetic layer to an external stress or a stress induced by the change of electric field and temperature is shown to affect significantly the spin properties of nitrogen-vacancy centers in diamond. Under ambient conditions, realistic environmental noise and material imperfections, our detailed numerical studies show that this hybrid device can achieve significant improvements in sensitivity over the pure diamond based approach in combination with nanometer scale spatial resolution. Beyond its applications in quantum sensing the proposed hybrid architecture offers novel possibilities for engineering strong coherent couplings between nanomechanical oscillator and solid state spin qubits.Introduction.-The sensitive measurement of signals, such as force, pressure, electric field, temperature, with high spatial resolution possesses a wide range of applications in physics, engineering and the life sciences. Conventional methods, e.g. for pressure detection can usually operate at length scales down to the micron scale. Going beyond this regime whilst retaining highest sensitivity represents a significant challenge.

show abstract

“…One solution is to overgrow an additional diamond layer onto the surface, which has succeeded in prolonging T 2 times. 67 Our results show that NV − spin qubits at the depth ≥ 2.8 µm exhibit reliable properties of long coherence times and stable charge states.…”

Section: 30mentioning

confidence: 79%

Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond

et al. 2014

Self Cite

View full text Add to dashboard Cite

Nitrogen impurities help to stabilize the negatively-charged-state of NV − in diamond, whereas magnetic fluctuations from nitrogen spins lead to decoherence of NV − qubits. It is not known what donor concentration optimizes these conflicting requirements. Here we used 10 MeV 15 N 3+ ion implantation to create NV − in ultrapure diamond. Optically detected magnetic resonance of single centers revealed a high creation yield of 40 ± 3% from 15 N 3+ ions and an additional yield of 56 ± 3% from 14 N impurities. High-temperature anneal was used to reduce residual defects, and charge stable NV − , even in a dilute 14 N impurity concentration of 0.06 ppb were created with long coherence times.The realization of quantum registers, which are comprised of several quantum bits (qubits), is currently a central issue in quantum information and computation science.1 Among many competing quantum systems, photoactive defect spins of negatively charged nitrogen vacancy (NV − ) centers in diamond are unique solid-state qubits, due in part to ambient pressure and temperature operation.2-4 The NV − center is a single-photon emitter with zero-phonon-line (ZPL) at 637 nm, 5 where both of 3 A 2 electronic ground and 3 E excited states locate inside the diamond band-gap. The spin sublevels, |m s = 0 and |m s = ±1 , of the triplet (S = 1) ground state are separated by ∼ 2.87 GHz due to spin-spin interaction.6 Arbitrary states including superpositions of spin levels may be created by resonant microwave pulses after optical initialization, and then readout by measuring fluorescence intensity.3 Experimental proofs of strongly-coupled NV − spins, 7-9 magnetic coupling between a NV − spin and another electron spin 9,10 or nuclear spins, 11-15 , in addition to coupling to photons 16,17 or optical cavities, 18-20 exemplify the robust yet mutable nature of the NV scheme as well as the beginnings of scalability.The NV quantum coherence decays in time due to magnetic fluctuations from substitutional nitrogen (N 0 s ) electron spins and 13 C nuclear spins, and spin-lattice relaxation.21-23 Thus, the use of high purity ([N 0 s ] ∼ ppb) type IIa diamonds with reduced 13 C content, and position controlled N ion implantation to create NV − centers, is a promising avenue towards a high quality multiqubit system.8 Nevertheless, substitutional nitrogen impurities, which donate electrons to NV centers, are actually essential for stabilizing the NV − charge state. 24The negative NV charge state is predominant at thermal 26 The presence of the neutral NV 0 charge state (S = 1/2) is undesirable as its applications are hindered by rapid dephasing in the ground state. Therefore, the understanding of a minimum concentration threshold of N 0 s impurities in order to form stable NV − spin qubits is of concern for reliable engineering and scalability.In this study we isotopically distinguish engineered 15 NV − spin qubits due to 15 N implantation from 14 NV − due to preexisting 14 N impurities in ultrapure diamond, both of which can be created by 15 N 3+ (10 MeV) im...

show abstract

Enhancing the spin properties of shallow implanted nitrogen vacancy centers in diamond by epitaxial overgrowth

Cited by 57 publications

References 34 publications

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Hybrid sensors based on colour centres in diamond and piezoactive layers

Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond

Contact Info

Product

Resources

About