Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond

Lang, Johannes; Häußler, Stefan; Fuhrmann, Jens; Waltrich, Richard; Laddha, Sunny; Scharpf, Jochen; Kubanek, Alexander; Naydenov, Boris; Jelezko, Fedor

doi:10.1063/1.5143014

Cited by 30 publications

(29 citation statements)

References 35 publications

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“…Ion implantation and annealing apparatuses used for center generation are described in detail in a previously published study on shallow implanted silicon vacancy centers 57 . The home-built low energy ion implanter (featuring ion source IQE12/38 from Specs) is equipped with a Wien mass filter to select the desired ion species and utilizes an Einzel lens to focus the ion beam to spot diameters of approximately .…”

Section: Methodsmentioning

confidence: 99%

Indirect overgrowth as a synthesis route for superior diamond nano sensors

Findler

Lang

Osterkamp

et al. 2020

Sci Rep

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The negatively charged nitrogen-vacancy ($$\hbox {NV}^{-}$$ NV - ) center shows excellent spin properties and sensing capabilities on the nanoscale even at room temperature. Shallow implanted $$\hbox {NV}^{-}$$ NV - centers can effectively be protected from surface noise by chemical vapor deposition (CVD) diamond overgrowth, i.e. burying them homogeneously deeper in the crystal. However, the origin of the substantial losses in $$\hbox {NV}^{-}$$ NV - centers after overgrowth remains an open question. Here, we use shallow $$\hbox {NV}^{-}$$ NV - centers to exclude surface etching and identify the passivation reaction of NV to NVH centers during the growth as the most likely reason. Indirect overgrowth featuring low energy (2.5–5 keV) nitrogen ion implantation and CVD diamond growth before the essential annealing step reduces this passivation phenomenon significantly. Furthermore, we find higher nitrogen doses to slow down the NV–NVH conversion kinetics, which gives insight into the sub-surface diffusion of hydrogen in diamond during growth. Finally, nano sensors fabricated by indirect overgrowth combine tremendously enhanced $$T_2$$ T 2 and $$T_2^*$$ T 2 ∗ times with an outstanding degree of depth-confinement which is not possible by implanting with higher energies alone. Our results improve the understanding of CVD diamond overgrowth and pave the way towards reliable and advanced engineering of shallow $$\hbox {NV}^{-}$$ NV - centers for future quantum sensing devices.

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Section: Methodsmentioning

confidence: 99%

Indirect overgrowth as a synthesis route for superior diamond nano sensors

Findler

Lang

Osterkamp

et al. 2020

Sci Rep

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“…• C min with an intermediate soak for 1 h at 500 • C. Between all processing steps, the substrate was boiled several hours in a 1:1:1 mixture of sulphuric, perchloric and nitric acid to remove any organic or graphitic residues from the surfaces of the diamond. Details on the annealing and ion implantation setups for sensor fabrication can be found in [46].…”

Section: Nv − -Center Creationmentioning

confidence: 99%

Integrated Magnetometry Platform with Stackable Waveguide-Assisted Detection Channels for Sensing Arrays

et al. 2021

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The negatively-charged NV − -center in diamond has shown great success in nanoscale, highsensitivity magnetometry. Efficient fluorescence detection is crucial for improving the sensitivity. Furthermore, integrated devices enable practicable sensors. Here, we present a novel architecture which allows us to create NV − -centers a few nanometers below the diamond surface, and at the same time in the mode field maximum of femtosecond-laser-written type-II waveguides. We experimentally verify the coupling efficiency, showcase the detection of magnetic resonance signals through the waveguides and perform first proof-of-principle experiments in magnetic field and temperature sensing. The sensing task can be operated via the waveguide without direct light illumination through the sample, which marks an important step for magnetometry in biological systems which are fragile to light. In the future, our approach will enable the development of two-dimensional sensing arrays facilitating spatially and temporally correlated magnetometry.

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“…We refer this effect to the dedicated green laser excitation wavelength used in this studies. The off-resonant excitation of the silicon vacancy was mostly performed with help of 730 nm red laser [29,30]. We also note that the possible presence of negatively charged silicon vacancy (ZPL at 737 nm) might be blurred within the phonon side-band of the nitrogen vacancy, as the experiments in this paper were performed at room temperature.…”

Section: Discussionmentioning

confidence: 99%

Plasma Treatments and Light Extraction from Fluorinated CVD-Grown (400) Single Crystal Diamond Nanopillars

Radtke

Slablab

Vlierberghe

et al. 2020

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We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV−). We focus on the naturally-generated by chemical vapor deposition (CVD) growth of NV−. Applied diamond was neither implanted with 14N+, nor was the CVD synthesized SCD annealed. To investigate the possibility of light extraction by the utilization of NV−’s bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/reactive ion etching (ICP-RIE) to generate light focusing nanopillars. In addition, we have fluorinated the diamond’s surface by dedicated 0 V SF6 ICP plasma. Light extraction and spin manipulations were performed with photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) at room temperature. We have observed a remarkable effect based on the selective 0 V SF6 plasma etching and surprisingly, in contrast to literature findings, deactivation of NV− centers. We discuss the possible deactivation mechanism in detail.

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Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond

Cited by 30 publications

References 35 publications

Indirect overgrowth as a synthesis route for superior diamond nano sensors

Indirect overgrowth as a synthesis route for superior diamond nano sensors

Integrated Magnetometry Platform with Stackable Waveguide-Assisted Detection Channels for Sensing Arrays

Plasma Treatments and Light Extraction from Fluorinated CVD-Grown (400) Single Crystal Diamond Nanopillars

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