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Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this study, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous studies use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.

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