Effect of Hf alloy in ZrOx gate insulator for solution processed a-IZTO thin film transistors

Bukke, Ravindra Naik; Mude, Narendra Naik; Lee, Jiseob; Avis, Christophe; Jang, Jin

doi:10.1109/led.2018.2880177

Cited by 18 publications

(49 citation statements)

References 16 publications

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“…Therefore, a new high-performance dielectric layer is developed to replace it. Therefore, high-k materials, such as ZrO 2 [9,10], HfO 2 [11], and TiO 2 [12], have received extensive attention from researchers. However, high-k materials are difficult to apply on a large scale due to their high cost, easy crystallization, large leakage current, and high surface roughness [13].…”

Section: Introductionmentioning

confidence: 99%

A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Ding

Qi³

et al. 2021

Coatings

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In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

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Section: Introductionmentioning

confidence: 99%

A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Ding

Qi³

et al. 2021

Coatings

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“…The O 1s CL spectrum can be de-convoluted into two sub-peaks with binding energies located at 531.1 eV (O 1 ) and 532.2 eV (O 2 ) [40,64,65,66,67]. The O 1 and O 2 peaks are associated with the metal-oxygen bonds (O 1 ) and hydroxyl group (O 2 ), respectively [5,66,67]. As illustrated in Figure 6a–c, the hydroxyl-related peak (O 2 ) increased with annealing temperatures from 225 °C to 250 °C and decreased from 250 °C to 275 °C.…”

Section: Resultsmentioning

confidence: 99%

“…As one of the promising candidates for next-generation nonvolatile memories, resistive random access memory (RRAM) has received considerable attention due to significant advantages concerning simplicity of structure, low power consumption, fast read & write speed, high scalability and 3-D integration feasibility compared to the industry standard silicon-based flash memories [1,2,3,4,5,6,7]. Current candidate materials for the resistive switching (RS) layer of RRAM devices include perovskite, ferromagnetic and metal oxide-based materials [1,3,4,5,8,9,10,11]. In particular, metal oxide-based materials such as AlO x , NiO x , TiO x and HfO x are currently extensively discussed because of the simplicity of the material [10,12,13,14].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Shen

Mitrović

et al. 2019

Micromachines

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Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>104), the narrowest resistance distribution, the longest retention time (>104 s) and the most endurance cycles (>150).

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“…Owing to its potential for large-area fabrication, equipment simplicity, roll-to-roll capability, atmospheric processing, and low-cost, the solution process has attracted many attentions, especially for fabricating metal oxide thin-film transistors (MOTFTs) [1][2][3]. Among various metal oxides, indium oxide (InO) is a promising semiconductor due to its high carrier mobility, a wide band gap (3.6-3.75 eV), and a superb transparency in visible region [4,5].…”

Section: Introductionmentioning

confidence: 99%

Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation

Zhao

Zhang

et al. 2020

Journal of Alloys and Compounds

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Effect of Hf alloy in ZrOx gate insulator for solution processed a-IZTO thin film transistors

Cited by 18 publications

References 16 publications

A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation

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