Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N<sub>2</sub>O Annealing

Rabbi, Md. Hasnat; Billah, Mohammad Masum; Siddik, Abu Bakar; Lee, Suhui; Lee, Jiseob; Jang, Jin

doi:10.1109/led.2020.3034119

Cited by 18 publications

(13 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The PBTS and NBTS was performed at VG= ± 20 V at temperature of 60 o C for 1h. This indicates excellent active/gate insulator interface with very less trap sites (14). Environmental stability was performed at 85 o C and 85% humidity for 48 h. There is no detectable change in the device performance as shown in Fig.…”

Section: Resultsmentioning

confidence: 76%

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

Rabbi

Lee

Sasaki

et al. 2022

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

We report a very simple hotplate crystallization technique to achieve the polycrystalline InGaO (IGO) thin films at low temperature (<400 °C). The coplanar thin film transistor (TFT) with polycrystalline IGO exhibits linear mobility over 50 cm2V−1s−1 and excellent stability under PBTSINBTS and 85% humidity at 85°C for 2 days. We have also achieved very fast 23 stage ring oscillator with a frequency of 2.36 MHz because of coplanar structure and high mobility. This low‐cost technique is very suitable for the manufacturing of polycrystalline oxide TFT backplane for large area, high resolution AMOLED displays.

show abstract

Section: Resultsmentioning

confidence: 76%

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

Rabbi

Lee

Sasaki

et al. 2022

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

show abstract

“…On the other hand, a negative shift in the binding energy for both Ga 2p (−0.38 eV) and In 3d (−0.25 eV) indicates the carrier increment by defects passivation upon N 2 O PFA. [ 51,54 ]…”

Section: Resultsmentioning

confidence: 99%

“…A self‐align GI etch and doping (without stripping the photoresist before gate formation) by using NF 3 plasma treatment were performed to form N+ a–IGO layer. [ 52,54,56,75–77 ] Note that, the N+ IGO sheet resistance of 507.44 ± 40.3 Ω sq. −1 (ten data points on all over the 15 × 15 cm sample) were measured using the four‐point probe measurement system, suggesting an excellent N+ a‐IGO formation with a N b of 1.71 × 10 20 cm 3 (Table S1, Supporting Information), which was very crucial for good ohmic contact in the coplanar TFT structure.…”

Section: Methodsmentioning

confidence: 99%

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Rabbi

Ali

Park

et al. 2023

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

High‐performance, coplanar amorphous In0.5Ga0.5O (a‐IGO) thin film transistor (TFT) on a polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film deposited at 370 °C has less than 8% nanocrystalline‐In2O3 dots and a mass density of 6.6 g cm−3. The a‐IGO TFT on PI exhibits linear mobility over 30 cm2 V−1 s−1 and a negligible shift in threshold voltage (ΔVTH = <0.3 V) under positive bias (+20 V) at 60 °C for 1 h. The TFT performance is stable even when bent to a radius of ≈1 mm. The X‐ray photoelectron spectroscopy results of the SP a‐IGO deposited at 370 °C indicate the O‐vacancy (Vo) related defects of 25.79% and hydroxyl (OH) at less than 3%, indicating a good active/gate insulator interface. A seven‐stage ring oscillator made of SP a‐IGO TFTs exhibits a high oscillation frequency (>2.3 MHz) with a low propagation delay time of ≈30 ns per stage at a supply voltage (VDD) of 15 V. The fabricated gate shift register circuit works up to the last stage without any decrement of the input voltage (15 V) with rising and falling times less than 0.8 µs. Therefore, the coplanar a‐IGO TFT by SP deposited at 370 °C is a promising candidate for low‐cost, flexible TFT backplanes of foldable electronics.

show abstract

“…The deconvoluted O1s spectra for the AD, hotplate crystallized, and N 2 O annealed after HPC are shown in Figure 5a-c. The metal oxide (MO) bond, oxygen vacancy (Vo), and hydroxyl (OH) group peaks were found at 529.8, 531, and 532.1 eV [16,41] respectively for crystalline IGO, and the relative peak area percentages are summarized in Figure 5d and Table 3. The Vo-related peak area ratios for AD and HPC-IGO are similar (17.09% and 16.57%) each other, whereas the OH-related peak area percentage increases significantly from 16.42% to 29.75%.…”

Section: Resultsmentioning

confidence: 99%

“…Afterward, the sample was mounted on a hotplate at a temperature of 350 °C in an air environment to crystallize the a-InGaO film (Figure 1b). A 100 nm thick SiO 2 at 200 °C (a lower temperature than that of the buffer SiO 2 to avoid damage to the underlayer oxide semiconductor, because high-temperature deposition can damage the GI/active interface) [41,54] and a 150 nm Mo layer was then deposited and subsequently patterned as the gate insulator and gate electrode, respectively. NF 3 plasma treatment was performed to create the N+ PC-IGO region with a resistivity of 0.293 Ω-cm to achieve good ohmic contact between the source/drain electrode and the active layer.…”

Section: Methodsmentioning

confidence: 99%

Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm² V^‐1 s^‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays

et al. 2022

Self Cite

View full text Add to dashboard Cite

large-area processability to achieve high carrier mobility with ultra-low off-currents, and very smooth surface, opening a wide window as an active semiconductor layer for the active-matrix (AM) transparent and flexible electronics. [1] Especially, indium oxide (In 2 O 3 ) based materials with the addition of zinc oxide (ZnO), gallium oxide (Ga 2 O 3 ), and tin oxide (SnO 2 ) are widely investigated for a TFT channel semiconductor for active-matrix organic light-emitting diode (AMOLED) technology. [2][3][4][5] Among them, amorphous InGaZnO (a-IGZO) becomes an industrial standard for display backplane technology. [4] But, the key issue of a-IGZO is its limited mobility because of its material disorder in the amorphous state. [4] In the hexagonal IGZO materials, crystallization of room-temperature (RT) deposited amorphous IGZO can be possible by high-temperature annealing over 700 °C. [6] On the other hand, by raising both the deposition temperature and oxygen partial pressure, a crystalline IGZO with a C axis aligned crystal orientation (CAAC-IGZO), can be obtained. It exhibits some unique properties in terms of performance such as ultra-low off-state current, close to ideal subthreshold swing (SS) because of the absence of minority carriers, which can differentiate them from the amorphous one. By having well defined CAAC crystal structure it is possible to achieve excellent TFT performance compared to the randomly orientated IGZO crystallites. The maximum reported mobility is 65.5 cm 2 V −1 s −1 for a sputtered coplanar CAAC-IGZO with a dual-gate structure. [7] Several TFT structures are investigated including back-channel etched (BCE), etch stopper inverted staggered, and self-aligned coplanar, however, the coplanar structure has the advantage of having the minimum overlap parasitic capacitance which is suitable for the large area, AMOLED displays.The requirement for a high drain current with high mobility TFT is increasing for large area, high-resolution displays. Crystalline oxide is being studied to overcome the mobility issue associated with the amorphous phase. Among them, crystalline In 2 O 3 is known as the wide bandgap (≈3.7 eV), highly Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N 2 O environment. A high-density PC-IGO of ≈7.15 g cm -3 with reduced oxygen vacancy (≈14.83%) and hydroxyl (OH) related defects (≈10.96%) has been obtained by N 2 O annealing. Self-aligned coplanar thin-film transistor (TFT) with the PC-IGO exhibits the average saturation mobility of 78.73 cm 2 V -1 s -1 , threshold voltage of -1.07 V, subthreshold swing of 0.147 V dec -1 , and the on/off current ratio of over 10 8 . The TFTs show excellent stability under bias-temperature stress with a negligible threshold voltage shift (ΔV TH ) of + 0.1 and -0.1 V for the positive and negative bias stresses, respectively. The TFTs exhibit very stable environmental stability when...

show abstract

Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N₂O Annealing

Cited by 18 publications

References 25 publications

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm² V^‐1 s^‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays

Contact Info

Product

Resources

About

Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing

Cited by 18 publications

References 25 publications

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V‐1 s‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays

Contact Info

Product

Resources

About

Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N₂O Annealing

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm² V^‐1 s^‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays