We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A v ) of 23.5 dB, a cutoff frequency (f c ) of 500 kHz, a unit gain frequency (f ug ) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/µs, and a phase margin (PM) of 102 • at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.
INDEX TERMSCoplanar a-IGZO TFTs, dual gate, single gate, operational amplifier (op-amp).
We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.
We have developed stable and high performance etch-stopper amorphous indium-galliumzinc oxide thin-film transistor (TFT) by using split active oxide semiconductor. The amorphous indiumgallium-zinc oxide TFTs exhibit the mobility as high as over 70 cm 2 /Vs and the stable operation under positive bias temperature stress. In this work, we demonstrated a 4-in. transparent active-matrix organic light-emitting diode display using oxide TFT backplane with split active layer, where the gate driver is integrated.
We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high‐resolution organic light‐emitting diode (OLED) displays. The first TFT layer is bulk‐accumulation mode, and the second TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm2/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.
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