An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays

Chen, Yuanfeng; Kim, Hyunho; Lee, Jiseob; Lee, Suhui; Do, Youngbin; Choi, Munsu; Jang, Jin

doi:10.1109/ted.2020.3023069

Cited by 19 publications

(20 citation statements)

References 28 publications

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“…Thanks to the very high output resistance, 4‐TFT cascode CM shows the perfect 1:1 mirroring with no error. We find that SG TFT‐based circuits like inverter, 13 pseudo‐CMOS‐based high‐speed ring oscillator, 14 operational amplifier, 10 gate driver, 15 and CM (of this work) could not compete with their respective DG counterparts. The key factors for this performance degradation can be enlisted as lower on current, circuit speed, cutoff frequency, bandwidth, slew rate, 10 poor turn‐on voltage uniformity, and inferior threshold voltage stability against stress.…”

Section: Resultsmentioning

confidence: 79%

“…The advantages with DG self‐aligned coplanar structures are bulk accumulation with negligible source/drain (S/D) to gate (G) overlap capacitance, higher drain current, 11 and better stability against negative bias illumination stress (NBIS), 12 which leads to improved circuit operation. We also have improved the performances of TFT circuits such as inverter, 13 ring oscillator, 14 op‐amp, 10 and gate driver 15 emphasizing the DG structure.…”

Section: Introductionmentioning

confidence: 99%

“…There is no significant area difference between DG‐ and SG‐based CM circuits. So, the cause of nonidealities of the SG‐based CMs are about 2.5 times lower on current, 10 threshold shifts, that is, overall all performance, and stability issues 10–15 . In particular, to be used with a high supply voltage (e.g., 10 V), CM needs to deal with higher mirror current.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs

Rahaman

Adhikary

Hossain

et al. 2021

Circuit Theory & Apps

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In this brief report, we state current mirror (CM) circuit employed by coplanar amorphous indium–gallium–zinc oxide (a‐IGZO) thin‐film transistors (TFTs) with dual‐gate structure. The 2‐TFT conventional structure with different mirroring ratios and 4‐TFT cascode type are investigated. We compared the CM circuit performances made of the dual‐gate (DG) and single‐gate (SG) TFTs. At higher mirror gain, the percentage of error increases due to the issues such as TFT performance uniformity and threshold voltage shift. It is found that the DG‐based CM circuit shows excellent mirror gain even at 10× with only 2% error.

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Section: Resultsmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs

Rahaman

Adhikary

Hossain

et al. 2021

Circuit Theory & Apps

Self Cite

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“…The detailed operation of GSR appears in our previous work. 62 The GSR output signals are working through the last stage, 32 nd , as can be seen in Supplementary Fig. S9d.…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive, Ultra-Thin Dynamic Lateral Pressure Sensor Using Blue Laser Exposed Porous CNTs

Jang

Park

Choi

et al. 2022

Preprint

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Piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. An effective approach to enhance its performance is to make micro-structured device. In this paper, porous carbon nanotubes (CNTs) are formed by blue laser (BL) exposure on CNTs layer, which increases its thickness ~4 times compared to the as-deposited layer. Then, the pressure sensor is fabricated by spin coating of styrene-ethylene-butylene-styrene (SEBS) elastomer on the porous CNTs layer. A 1.32 µm thick pressure sensor exhibits a high sensitivity of 6.54 x 106 kPa-1, a wide sensing range of 278 Pa ~ 40 kPa, and fast response/recovery times of 900/760 µs, respectively. The stability of the pressure sensor is demonstrated by repeated loading and unloading of 20 kPa for 3600 cycles. The stretchable pressure sensor was also demonstrated using lateral CNT electrodes on SEBS surface, exhibiting stable pressure performance up to 20% stretching. Finally, a 32 x 32 active-matrix pressure sensor array is demonstrated consisting of amorphous InGaZnO4 thin-film transistor (TFT) backplane for pressure mapping and real-time monitoring. The sensor array demonstrates dynamic area touch by pen writing with ~1 cm/s speed.

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“…Most TFTs are made of hydrogenated amorphous silicon (a-Si: H) as the primary material because its energy level is smaller than that of single-crystal silicon. With progress in manufacturing, the TFT resolution tends to be high-definition [ 3 , 4 ] at a comprehensive view illumination coupled to the ultra-high definition and beyond. Thus, the electrode pixel in TFT approaches a smaller and smaller dimension.…”

Section: Introductionmentioning

confidence: 99%

Light Emitted Diode on Detecting Thin-Film Transistor through Line-Scan Photosensor

2021

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This paper explores the effectiveness of the white, red, green, and blue light emitted diodes (LEDs) light sources to detect the third layer of the electrode pixel and the fourth layer of the via-hole passivation on thin-film transistors. The time-delay-integration charge-coupled device and a reflective spectrometer were implemented in this experiment. The optical conditions are the same, as each light source and the digital image’s binary method also recognize the sharpness and contrast in the task. Consequently, the white and the blue LED light sources can be candidates for the light source for the optical inspection, especially for monochromic blue LED’s outperformance among the light sources. The blue LED demonstrates the high spatial resolution and short wavelength’s greater energy to trigger the photosensor. Additionally, the metal material has shown a tremendous responsibility in the photosensor with 150 Dn/nj/cm2 over the sensibility. The mercury 198Hg-pencil discharge lamp emits the stable spectral wavelength to significantly calibrate the spectrometer’s measurement.

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An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays

Cited by 19 publications

References 28 publications

Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs

Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs

Highly Sensitive, Ultra-Thin Dynamic Lateral Pressure Sensor Using Blue Laser Exposed Porous CNTs

Light Emitted Diode on Detecting Thin-Film Transistor through Line-Scan Photosensor

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