This paper presents a study on the dielectric behavior of SU-8 photoresist. We present measurements on the leakage current levels through SU-8 layers of varying thickness. The leakage current is dominated by thermionic emission. We have further determined the dielectric strength of SU-8 to be 4.4 MV cm −1 . The remarkably high dielectric strength allows the material to be used for high-voltage applications.

An unpackaged microchip is used as the sensing element in a miniaturized gaseous proportional chamber. This letter reports on the fabrication and performance of a complete radiation imaging detector based on this principle. Our fabrication schemes are based on wafer-scale and chip-scale postprocessing. Compared to hybrid-assembled gaseous detectors, our microsystem shows superior alignment precision and energy resolution, and offers the capability to unambiguously reconstruct 3-D radiation tracks on the spot.

No abstract

No abstract

No abstract