Abstract. In cryptography it is assumed that adversaries only have black box access to the secret keys of honest parties. In real life, however, the black box approach is not sufficient because attackers have access to many physical means that enable them to derive information on the secret keys. In order to limit the attacker's ability to read out secret information, the concept of Algorithmic Tamper Proof (ATP) security is needed as put forth by Gennaro, Lysyanskaya, Malkin, Micali and Rabin. An essential component to achieve ATP security is read-proof hardware. In this paper, we develop an implementation of read-proof hardware that is resistant against invasive attacks. The construction is based on a hardware and a cryptographic part. The hardware consists of a protective coating that contains a lot of randomness. By performing measurements on the coating a fingerprint is derived. The cryptographic part consists of a Fuzzy Extractor that turns this fingerprint into a secure key. Hence no key is present in the non-volatile memory of the device. It is only constructed at the time when needed, and deleted afterwards. A practical implementation of the hardware and the cryptographic part is given. Finally, experimental evidence is given that an invasive attack on an IC equipped with this coating, reveals only a small amount of information on the key.

Studies of the properties and characteristics of transition metal silicides have been stimulated by their (potential) use in integrated circuit technology. This review describes some of the most recent studies in this field of research. Formation mechanisms of silicides are discussed in some detail. A division is made between near-noble and refractory metal silicidation which aids in the understanding of differences in formation mechanisms of the various silicides. The evolution of the components of thin film stress during metal silicidation is also elucidated. In the review of the practical uses of these materials, emphasis is placed on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer. Specific attention is paid to the silicidation processes of TiSiz and CoSiz. The electronic structure of silicides is discussed on the basis of band-structure calculations and photoemission experiments. The important electrical characteristics of films are then examined in terms of the microstructure of the films. A review of the crystallographic (epitaxial) orientation relationships between silicide films and monocrystalline Si is given. The epitaxial growth of CoSiz and FeSiz on and in Si is discussed thoroughly. The review of epitaxial silicide formation is used as the basis for a description of some futuristic applications of these materials. One such application utilizes the semiconducting properties of a FeSiz phase while another employs the Schottky-barrier characteristics of silicide/Si interfaces for the formation of advanced transistors. The latest electrical results obtained from the semiconducting material and from a so-called permeable base transistor are presented.

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/µm with ON/OFF current ratios of around 10 7 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.Index Terms-Buried oxide (BOX), charge-plasma (CP) diode, diode, p-i-n diode, Schottky barrier, silicon-on-insulator (SOI).

Hot‐wire assisted atomic layer deposition (HWALD) is a novel energy‐enhancement technique. HWALD enables formation of reactive species (radicals) at low substrate temperatures, without the generation of energetic ions and UV photons as by plasma. This approach employs a hot wire (tungsten filament) that is heated up to a temperature in the range of 1300–2000 °C to dissociate precursor molecules. HWALD has the potential to overcome certain limitations of plasma‐assisted processes. This work investigates the ability of a heated tungsten filament to catalytically crack molecular hydrogen or ammonia into atomic hydrogen and nitrogen‐containing radicals. The generation of these radicals and their successful delivery to the wafer (substrate) surface are experimentally confirmed by dedicated tellurium‐etching and silicon‐nitridation experiments. It further reports on deposition of low‐resistivity oxygen‐free tungsten films by using HWALD, as well as on the effect of hot‐wire‐generated nitrogen radicals and atomic hydrogen in deposition of aluminum nitride and boron nitride films. In parallel, this work provides important illustrative examples of using in situ real‐time monitoring of deposition and etching processes, together with extracting a variety of film properties, by spectroscopic ellipsometry technique.