BiCMOS technology improvements for microwave application

Noort, W.D. van; Rodriguez, A.; Sun, Haoliang; Zaato, F.; Zhang, N.; Nesheiwat, Tayel; Neuilly, F.; Melai, J.; Hijzen, E.A.

doi:10.1109/bipol.2008.4662720

Cited by 50 publications

(24 citation statements)

References 7 publications

(11 reference statements)

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“…The first gain stage has been realized using a 0.25μm SiGe:C BiCMOS technology with a bipolar cut-off frequency (ft) of 216GHz (QuBIC4Xi) [6]. The current gain is close to 2000, which almost eliminates the base current shot noise and makes the device rather similar to a GaAs FET in terms of noise performance.…”

Section: B Used Si Technologiesmentioning

confidence: 99%

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Bergervoet

Leenaerts

Jong

et al. 2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27 o C and 1.1 at 65 o C. The output IP3 is +40dBm at 27 o C and +37dBm at 65 o C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

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Section: B Used Si Technologiesmentioning

confidence: 99%

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Bergervoet

Leenaerts

Jong

et al. 2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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“…The LNA's are fabricated in a 0.25J.lm SiGe: C BiCMOS technology which features peak ftlfmax of 2161177 GHz [6] and a minimum NF of about 0.9 dB at 20 GHz. The chip micrograph is shown in Fig.…”

Section: Measurementsmentioning

confidence: 99%

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

Matters-Kammerer

Mahmoudi

et al. 2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 p,m SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, bothLNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

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“…The K-band controlled variable attenuator is designed with a NXP in house BiCMOS process (0.25μm CMOS, 140 GHz Ft Heterojunction Bipolar Transistor) [8].…”

Section: A Requirementsmentioning

confidence: 99%

Design of a K-band wideband controlled variable attenuator for microwave Built-In-Self-Test applications

Lahbib¹,

Descamps

Doukkali

et al. 2013

2013 13th Mediterranean Microwave Symposium (MMS)

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This paper presents a new microwave wideband controlled variable attenuator designed in a BiCMOS process. This variable attenuator is implanted as part of a microwave Built-In-Self-Test (BIST) circuit. The proposed BIST cell is dedicated for direct low cost measurement of the gain and the input 1dB compression point (CP1) of a K-band satellite reception chain (18.2 GHz-22 GHz). The simulation of the controlled variable attenuator with RLCk parasitic extraction shows that it can operate up to 100 GHz with a consumption of 4 mA, an area less than 0.009 mm 2 excluding pads and a gain range of 36 dB when the attenuator is alone and 17 dB when it is concatenated to the other blocks. This result was confirmed with the performed measurement on the BIST device. This BIST circuit gives new perspectives in term of test strategy, cost reduction and measurement accuracy for mm-wave integrated circuits.Index Terms -Microwave, BIST, controlled variable attenuator, K-band circuit, variable gain amplifier, test.

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BiCMOS technology improvements for microwave application

Cited by 50 publications

References 7 publications

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

Design of a K-band wideband controlled variable attenuator for microwave Built-In-Self-Test applications

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BiCMOS technology improvements for microwave application

Cited by 50 publications

References 7 publications

A 1.95GHz sub-1dB NF, &#x002B;40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, &#x002B;40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

Design of a K-band wideband controlled variable attenuator for microwave Built-In-Self-Test applications

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Product

Resources

About

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS