The electrical conduction and dielectric strength of SU-8

Melai, J.; Salm, Cora; Smits, Sander M.; Visschers, J.L.; Schmitz, Jurriaan

doi:10.1088/0960-1317/19/6/065012

Cited by 52 publications

(46 citation statements)

References 16 publications

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“…Typical values for SU8 dielectric strengths are 100-150 V/lm and thickness dependent. Hence, for a 90 nm thick SU8 layer, the breakdown voltage is very close to 13 V. 18 The reverse sweep showed a distinct change in the flatband voltage shifting to about 1.3 V for 615 V sweeping voltage range. The hysteresis is attributed to the presence of SWCNTs as a floating gate and results from the charging and discharging of the SWCNTs when negative and positive voltages are consecutively applied.…”

Section: -2mentioning

confidence: 84%

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman

Rosamond

Alba

et al. 2012

Applied Physics Letters

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. (2012) 'Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nano oating gate.', Applied physics letters., 100 (2). 023302.Further information on publisher's website: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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Section: -2mentioning

confidence: 84%

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman

Rosamond

Alba

et al. 2012

Applied Physics Letters

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“…In addition, the dielectric strength of SU-8 is 4.43 ± 0.16 MV cm −1 which is remarkably high for a polymer material. It is reported that for 15 μm thick SU-8 has voltage breakdown of around 7 kV and increases over the thickness (Melai et al 2009). The simulated pullin voltage V p from the centre conductor is 10.5 V and the calculated maximum RF power is 2.2 W. There are 32 capacitance steps which change linearly from 102.23 fF to 3.57 pF with an incremental capacitance step of 0.11 pF as demonstrated in Fig.…”

Section: Electro-magnetic Simulationsmentioning

confidence: 99%

Design, simulation and analysis of a digital RF MEMS varactor using thick SU-8 polymer

et al. 2017

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initial displacement of the proposed horizontal truss fixedfixed beam structure. Compared to the conventional doubly clamped solid beam design, the proposed beam has less sensitivity to in-plane residual stress. This makes the pull in voltage to be less affected by the stress due to the fabrication. The simulated pull-in and lift-off voltages are 30 and 25 V respectively while the estimated switching time for the beam is 4.64 μs. The overall size of the varactor is 740 μm × 653 μm. The proposed RF MEMS varactor could be integrated in reconfigurable filters, phase shifters and matching networks targeting future multi-standard wireless communication systems.

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“…It exhibits many properties that make it suitable for the microfabrication of particle detectors, such as the ability to be structured in a broad range of thicknesses and with high aspect ratios [2], excellent smoothness [3] and transparency [4] (desirable characteristics for the optical materials used in detectors such as scintillators), a relatively high dielectric strength [5] (desirable in devices making use of high electric fields, such as gaseous ionization detectors), and finally low outgassing [6] (necessary to avoid the pollution of the high vacuum environments in which many detectors work) and radiation tolerance [7]. Here we review several particle detector technologies making use of microstructures obtained by SU-8 processing.…”

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confidence: 99%

SU-8 as a Material for Microfabricated Particle Physics Detectors

Maoddi

Mapelli

Jiguet³

et al. 2014

Micromachines

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Several recent detector technologies developed for particle physics applications are based on microfabricated structures. Detectors built with this approach generally exhibit the overall best performance in terms of spatial and time resolution. Many properties of the SU-8 photoepoxy make it suitable for the manufacturing of microstructured particle detectors. This article aims to review some emerging detector technologies making use of SU-8 microstructuring, namely micropattern gaseous detectors and microfluidic scintillation detectors. The general working principle and main process steps for the fabrication of each device are reported, with a focus on the advantages brought to the device functionality by the use of SU-8. A novel process based on multiple bonding steps for the fabrication of thin multilayer microfluidic scintillation detectors developed by the authors is presented. Finally, a brief overview of the applications for the discussed devices is given.

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The electrical conduction and dielectric strength of SU-8

Cited by 52 publications

References 16 publications

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Design, simulation and analysis of a digital RF MEMS varactor using thick SU-8 polymer

SU-8 as a Material for Microfabricated Particle Physics Detectors

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