Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experimentally demonstrate highly sensitive G/Si photodiodes. With the proposed design, an external quantum efficiency (EQE) of > 80% is achieved for wavelengths ranging from 380 to 930 nm.A maximum EQE of 98% is observed at 850 nm, where the responsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes. This efficiency is attributed to the highly effective collection of charge carriers photogenerated in Si under the GIS parts of the diodes.The experimental data is supported by numerical simulations of the diodes. Based on these results, a definition for the 'true' active area in G/Si photodiodes is proposed, which may serve towards standardization of G/Si based optoelectronic devices.

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. Here, we analyse in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by evaluating their cut-off frequency.

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A comprehensive simulation of 2D materials based BioFETs that simultaneously assesses different approaches employed to model the electrolyte-molecule interaction.

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