Assessment of three electrolyte–molecule electrostatic interaction models for 2D material based BioFETs

Toral‐Lopez, Alejandro; Marín, Enrique G.; Gonzalez-Medina, J. M.; Romero, Francisco J.; Ruiz, Francisco G.; Morales, Diego P.; Rodríguez, Noel; Godoy, A.

doi:10.1039/c8na00109j

Cited by 6 publications

(9 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…WO-dimensional (2D) semiconductors combine excellent electrostatics and electronic transport properties with high surface-to-volume ratio, ultimate scaling limits, flexibility and the feasibility to large-scale processing and manufacturing, constituting great candidates for low-cost wearable and implantable biosensors [1], [2]. In this regard, field-effect transistors (FETs) based on transition metal dichalcogenides (TMDs) are receiving considerable attention due to their ability to perform label-free electrical detection of biological species such as proteins, DNA, and several bio-molecules [3]- [7]. Their use as ion-sensitive FETs (ISFETs) has also been widely demonstrated showing excellent detection capabilities and, in the particular case of pH, high stability and near-ideal pH voltage sensitivity, close to the Nernst limit (around 59 mV/ pH at room temperature) [4], [5], [8]- [10].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Grour

Pasadas

Najari

et al. 2021

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on twodimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation including the Site-Binding model and the Gouy-Chapman-Stern approach, while the carrier transport is described by the drift-diffusion theory. The proposed model is provided in an analytical form and then implemented in Verilog-A, making it compatible with standard technology computer-aided design tools employed for circuit simulation. The model is benchmarked against two experimental transition-metal-dichalcogenide (MoS2 and ReS2) based ion sensors, showing excellent agreement when predicting the drain current, threshold voltage shift, and current/voltage sensitivity measurements for different pH concentrations.

show abstract

Section: Introductionmentioning

confidence: 99%

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Grour

Pasadas

Najari

et al. 2021

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…The implemented numerical tool self-consistently solves the Poisson and continuity equations in the sensor and its environment. The electrolyte corresponds to a Phosphate Buffer Saline (PBS) solution, whose regulatory chain of reactions-dependent on ionic strength and temperature-are described in [26], while the ion concentration is determined by the modified Boltzmann equation, including steric effects due to the finite size of the ions. This numerical tool has been previously validated with experimental results at the levels of the semiconductor device [27,28], the sensing interface [29], and the complete BioFET device [26].…”

Section: Methodsmentioning

confidence: 99%

“…This essential step, mandatory to increase the technology readiness level and prepare the leap from research to manufacture, demands an early performance evaluation with computational tools capable to reproduce heterogeneous device architectures, scenarios and operations. To that end, we present an improved numerical tool for 2DM-based BioFETs [26] that enables a comprehensive evaluation of the sensor variability through the impact in the device response of an arbitrary receptor distribution along a sensing interface. The capabilities of the proposed approach will be exemplified with the study of MoS 2 -based BioFETs aiming for the detection of DNA molecules.…”

Section: Introductionmentioning

confidence: 99%

Variability Assessment of the Performance of MoS2-Based BioFETs

et al. 2023

Self Cite

View full text Add to dashboard Cite

Two-dimensional material (2DM)-based Field-Effect Transistors (FETs) have been postulated as a solid alternative for biosensing applications thanks to: (i) the possibility to enable chemical sensitivity by functionalization, (ii) an atomically thin active area which guarantees optimal electrostatic coupling between the sensing layer and the electronic active region, and (iii) their compatibility with large scale fabrication techniques. Although 2DM-based BioFETs have demonstrated notable sensing capabilities, other relevant aspects, such as the yield or device-to-device variability, will demand further evaluation in order to move them from lab-to-fab applications. Here, we focus on the latter aspect by analyzing the performance of MoS2-based BioFETs for the detection of DNA molecules. In particular, we explore the impact of the randomized location and activation of the receptor molecules at the sensing interface on the device response. Several sensing interface configurations are implemented, so as to evaluate the sensitivity dependence on device-to-device variability.

show abstract

“…The semiconductor device and electrolyte models are combined for the numerical simulation of the whole device [12]. We solve the 2D Poisson equation using the corresponding model to obtain the charge in each region.…”

Section: Self-consistent Simulation Of 2d-isfetsmentioning

confidence: 99%

Numerical study of surface chemical reactions in 2D-FET based pH sensors

Toral‐Lopez

Marín

Cuesta

et al. 2020

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Self Cite

View full text Add to dashboard Cite

This work numerically evaluates the impact of surface chemical reactions on the performance of 2D-FET based pH sensors. More precisely, we focus on the adsorption of chlorine ions and the expulsion of protons at the sensing interface of FET sensor. This analysis is performed through numerical simulations encompassing the modelling of both the semiconductor device and the liquid solution to be analysed. In the semiconductor region the 2D Poisson -1D Continuity equations are self-consistently solved, while in the electrolyte region we deal with the modified Poisson -Boltzmann system [1]. The simulator also includes the interactions taking place at the electrolyte-sensing layer interface throuth: i) the non-constant profile of water permittivity, and ii) the steric effects in the ions concentration by introducing the Potentials of Mean Force (PMF) [2,3]. This comprehensive description of the electrolyte-device interface provides a suitable framework to unveil the relevance of multiple chemical reactions, like the adsorption of chlorine ions, on the behaviour of 2D-FET based pH sensors.

show abstract

Assessment of three electrolyte–molecule electrostatic interaction models for 2D material based BioFETs

Abstract: A comprehensive simulation of 2D materials based BioFETs that simultaneously assesses different approaches employed to model the electrolyte-molecule interaction.

Cited by 6 publications

References 35 publications

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Variability Assessment of the Performance of MoS2-Based BioFETs

Numerical study of surface chemical reactions in 2D-FET based pH sensors

Contact Info

Product

Resources

About