Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Gonzalez-Medina, J. M.; Ruiz, Francisco G.; Marín, Enrique G.; Godoy, A.; Gámiz, F.

doi:10.1016/j.sse.2015.07.007

Cited by 15 publications

(9 citation statements)

References 14 publications

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“…6 as a benchmark, and the parameters of MoS 2 are taken from the literature. 40) The ballistic performance of InSe-based FETs is significantly superior to that of MoS 2 -based FETs, due to the smaller transport effective mass and consequently high injection velocity. Particularly, I ON = 2460 μA μm −1 , and I ON /I OFF > 10 4 at V DD = 0.5 V for monolayer InSe FETs, satisfies the ITRS requirements for 2026 node for highperformance technology.…”

Section: Ballistic Transportmentioning

confidence: 99%

First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs

Chang

Liu

et al. 2019

Jpn. J. Appl. Phys.

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Ballistic performance of monolayer and few-layer indium selenide (InSe) based field effect transistors (FETs) is evaluated based on first principles calculation using density functional theory (DFT) and top-of-the-barrier transport model. Quantum confinement in atomically layered InSe is taken into account by self-consistently solving the Poisson and Schrödinger equations based on effective mass approximation. DFT calculations suggest that the electronic band structure of layered InSe strongly depend on the layer number, where the bandgap energy as well as electron effective mass gradually increases with layer number decreasing. Ballistic transport property as a function of layer number in InSe FET is calculated based on the thickness-dependent effective mass, and analyzed by the inversion density, injection velocity and quantum capacitance separately. Simulation results reveal that the InSe FETs with reduced layer number provide better electronic performance, showing great potential for future high-performance complementary metal-oxide-semiconductor application.

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Section: Ballistic Transportmentioning

confidence: 99%

First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs

Chang

Liu

et al. 2019

Jpn. J. Appl. Phys.

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“…This discrepancy between InSe and MoS 2 FET can be well understood by their effective masses. Firstly, in-plane effective mass of 0.14 m 0 in InSe is much smaller than 0.62 m 0 in MoS 2 [25] leading to much smaller density-of-states (DOS). In order to obtain the same density, the conduction band minimum is lower than Fermi level over a few k B T , where k B is the Boltzmann constant.…”

Section: Resultsmentioning

confidence: 99%

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack

Chang

Liu

et al. 2018

Micromachines

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This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schrödinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fröhlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fröhlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.

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“…Bidimensional materials show different interesting physical properties, making them suitable for many potential applications, including energy storage [1][2][3], biomedical research [4][5][6], field-effect transistors (FETs) [7][8][9][10], as well as sensors and biosensing [11,12]. One of such materials is Molybdenum disulfide, MoS2, a layered dichalcogenide with a hexagonal structure similar to graphene.…”

Section: Introductionmentioning

confidence: 99%

Ab-initio Molecular Dynamics Simulation of the Changes in the Optical Properties of 2D MoS<sub>2</sub> When Doped with Pt at 300 K

Ramírez-de-Arellano¹,

Jiménez-González²,

Canales³

et al. 2022

Preprint

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Using first-principles molecular dynamics (FPMD), we performed numerical simulations at 300 K to explore the interaction of a 2D MoS2 surface and a platinum atom, calculating the optical properties of the resulting material. The pristine MoS2 is a semiconductor with a gap of around 1.8 eV. The Pt atom is chemisorbed by the surface with an adsorption energy of −1.718 eV. With the adsorption of the Pt atom, the material remains a semiconductor, and its energy band gap reduces to 1.04 eV. But changes in the material's energy band structure imply substantial changes in its optical properties. The energy band structure of the 2D MoS2 with a sulfur vacancy VS shows that the material becomes a conductor, and there are significant changes in its optical properties. We also found that the Pt atom chemisorbs in a sulfur vacancy of the material, with an adsorption energy of −4.1164 eV. After the adsorption of Pt atoms in the sulfur vacancy, the material becomes a semiconductor with a band gap of 1.06 eV, and the changes in the optical absorption and reflectivity are significant.

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Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Cited by 15 publications

References 14 publications

First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs

First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack

Ab-initio Molecular Dynamics Simulation of the Changes in the Optical Properties of 2D MoS<sub>2</sub> When Doped with Pt at 300 K

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