We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs.
Liquid-gated Si nanowire field-effect transistor (FET) biosensors are fabricated using a complementary metal-oxide-semiconductor-compatible top-down approach. The transport and noise properties of the devices reflect the high performance of the FET structures, which allows label-free detection of cardiac troponin I (cTnI) molecules. Moreover, after removing the troponin antigens the structures demonstrate the same characteristics as before cTnI detection, indicating the reusable operation of biosensors. Our results show that the additional noise is related to the troponin molecules and has characteristics which considerably differ from those usually recorded for conventional FETs without target molecules. We describe the origin of the noise and suggest that noise spectroscopy represents a powerful tool for understanding molecular dynamic processes in nanoscale FET-based biosensors.
In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.
Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique properties which may completely differ from their bulk counterparts. The main aim of this work is to give an overview of results on noise and fluctuation phenomena in NW-based structures. We emphasize that noise is one of the main parameters, which determines the characteristics of the device structures and sets the fundamental limits of the working principles and operation regimes of NWs as key electronic elements, including field-effect transistors (FETs). We review the studies focusing on the understanding of noise sources and the main application aspects of noise spectroscopy. Noise application aspects will provide information about the performance of core-shell NW structures, the gate-coupling effect and its advantages for detection of the useful signal with prospects to extract it from the noise level, random telegraph signal as a useful tool for enhanced sensitivity, novel components of noise reflecting dielectric polarization fluctuation processes and fluctuation phenomena as a sensitive tool for molecular charge dynamics in NW FETs. Moreover, noise spectroscopy assists understanding of electronic transport regimes and effects, transport peculiarities in topological materials and aspects reflecting Majorana bound states. Thus noise in NWs on the basis of Si, Ge, Si/Ge, GaAs, InAs, InGaAs, Au, GaAs/ AlGaAs, GaAsSb, SnO 2 , GaN, ZnO, CuO, In 2 O 3 and AlGaN/GaN materials reflects a great variety of phenomena and processes, information about their stability and reliability. It can be utilized for numerous different applications in nanoelectronics and bioelectronics.
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