Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes

Kutovyi, Yurii; Zadorozhnyi, Ihor; Handziuk, Volodymyr; Hlukhova, Hanna; Boichuk, Nazarii; Petrychuk, M. V.; Vitusevich, S. А.

doi:10.1021/acs.nanolett.8b03508

Cited by 19 publications

(33 citation statements)

References 33 publications

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“…Therefore, noise in such devices has attracted a considerable attention mainly as a limiting factor for sensors performance. However, it was recently demonstrated that the low‐frequency noise in nanotransistor‐based biosensors can be successfully used as a useful signal . In particular, it has been shown that biosensors based on liquid‐gated nanowire FETs can demonstrate the random‐telegraph noise caused by the single trap phenomena .…”

Section: Introductionmentioning

confidence: 99%

“…However, it was recently demonstrated that the low‐frequency noise in nanotransistor‐based biosensors can be successfully used as a useful signal . In particular, it has been shown that biosensors based on liquid‐gated nanowire FETs can demonstrate the random‐telegraph noise caused by the single trap phenomena . In this specific case, improved sensitivity to the analyte can be obtained by considering trapping‐detrapping noise as a useful signal .…”

Section: Introductionmentioning

confidence: 99%

“…In particular, it has been shown that biosensors based on liquid‐gated nanowire FETs can demonstrate the random‐telegraph noise caused by the single trap phenomena . In this specific case, improved sensitivity to the analyte can be obtained by considering trapping‐detrapping noise as a useful signal . In order to have a better control over the single trap phenomena, we designed and fabricated silicon two‐layer (TL) nanowires FETs.…”

Section: Introductionmentioning

confidence: 99%

“…In order to have a better control over the single trap phenomena, we designed and fabricated silicon two‐layer (TL) nanowires FETs. Silicon two‐layer nanowire structures were fabricated on the basis of silicon on insulator (SOI) wafers using the top‐down approach and e‐beam lithography according to previously reported protocol . Nanowire structures were patterned through SiO 2 hard mask using anisotropic chemical wet etching in 5%‐tetramethylammonium hydroxide (TMAH) solution.…”

Section: Introductionmentioning

confidence: 99%

“…Low‐resistive source/drain contact leads were formed by thermal evaporation of 200 nm aluminum followed by a lift‐off process and annealing process to achieve ohmic contact. Fabricated devices as well as enhancement mode Si TL NW FETs yield a random telegraph signal (RTS) noise with advanced characteristics when measuring with a liquid gate …”

Section: Introductionmentioning

confidence: 99%

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Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Kutovyi

Zadorozhnyi

Handziuk

et al. 2019

Physica Status Solidi (b)

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Silicon two-layer (TL) nanowire (NW) field-effect transistors (FETs) are fabricated by applying a CMOS-compatible top-down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p-type conductivity are studied in a wide temperature range (100-300 K). A random telegraph signal (RTS) noise as a special case of trapping-detrapping processes is registered as a dominant noise component at room temperature. A shift of the characteristic corner (rollover) frequency of the RTS noise to lower frequencies with temperature decreasing is observed. By performing analysis of temperature-dependent low-frequency noise, the activation energy and hole capture cross section of a single trap responsible for the RTS noise are estimated to be (0.29 AE 0.02 eV) and (2.22 AE 0.15) Â10 À18 cm 2 , respectively. Obtained values suggest that the trap can be attributed to a vacancy-boron complex. At the temperature below 200 K fabricated devices demonstrate a clear generation-recombination noise with power spectral density proportional to 1/f 3/2 . Such noise behavior provides the evidence of diffusion-assisted processes in two-layer nanowire structures. This confirms the contribution of high-doped top silicon layer to the transistor transport properties.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Kutovyi

Zadorozhnyi

Handziuk

et al. 2019

Physica Status Solidi (b)

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Noise Spectroscopy of Transport and Ion‐Related Phenomena in Silicon Nanowire Field‐Effect Transistor Biosensors

Guo

Pustovyi

Kutovyi

et al. 2022

Adv Materials Inter

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sensing principle of FETs is the adsorption of charged analytes on the sensor surface, which results in a change of electrical potential to induce a detectable signal in the form of current change. A new approach for enhanced sensitivity is suggested based on the single trap phenomena [2] and demonstrated in nanowire devices with a liquid gate filled with different biochemical liquids including phosphate buffered saline (PBS). The actual biochemical detection is often in a solution system where the solid-liquid interface responds to the complex multiion environment. To expand the sensor applications and verify signal reliability, it is essential to study the effect of ion concentrations in biochemical solutions on the sensor-solution interface, especially for small analyte concentrations.To study the composition of the ion effect at the sensor-solution interface and the electrical signal response of the device to different ions is of great significance for the expansion of the sensor detection principles and the verification of signal registration reliability, especially for small concentrations of biochemical solutions.Nanostructures have already been confirmed to be an ultrasensitive platform to study the monovalent ion system (e.g. KCl and NaCl) and the divalent ion system in nanofluidic ionic transport. [3] Charge inversion phenomena can be observed during the sensing measurement, which means that more counterions can be found inside the electric double layer than are needed to compensate for the surface charge. Though this phenomenon was reported a century ago, recent research suggests that the ion-ion correlation is the likely origin of charge inversion. [4] The site-binding mode (SBM) mechanism [5] of inorganic salt ions on the oxide surface was previously reported. [6] The semiempirical Nikolsky theory is also used to estimate the selectivity of sensors against interfering ions. [7] The FET sensing ability typically requires the assistance of a given surface coating to promote the selectivity of ion sensing. [8] Sivakumarasamy [9] et al. developed a silicon nanotransistor with sizes scaled down to ≈25 nm to exploit ion-specific surface interaction without requiring a selective organic layer. They tested this method with blood serum containing Na + , K + , Ca 2+ , and Mg 2+ . A lack of understanding of ion-surface interaction on pure solid semiconductor materials gives rise to many inconsistencies in the same sensors for different biochemical sensing systems.High-quality, liquid-gated two-layer (TL) nanowire (NW) field-effect transistor (FET) structures are fabricated and studied in different operation regimes and with different concentrations of MgCl 2 solutions. The space-charge-limited current (SCLC) effect is sensitive to surface phenomena and is registered at the drain-source voltage (V DS ) above 0.14 V, and analyzed using several methods including noise spectroscopy. Noise spectra reflect the clear transformation from 1/f to 1/ (f in power 1.5) behavior, confirming the SCLC effect, which is sensit...

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Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Zhang,

Boichuk,

Pustovyi

et al. 2023

Adv Materials Inter

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The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concentration of MgCl2 solution for charge inversion at the solid‐liquid interface is verified using noise spectroscopy and confirmed using the capacitance‐voltage measurement technique. In this study, it is found that the Hooge parameter (αH) and the equivalent input noise (SU) can effectively reflect the ion behavior on the surface of the nanowire. Moreover, the noise curves for αH and SU indicate two turning points at concentrations of 10−4 and 10−1 m for a peak and a valley, respectively. The noise transformation is related to the behavior of ions near the solid‐liquid interface in solutions with different MgCl2 concentrations is revealed. The results show that noise spectroscopy is a powerful method for monitoring charge dynamic processes in the research field of biosensors.

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Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes

Cited by 19 publications

References 33 publications

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Noise Spectroscopy of Transport and Ion‐Related Phenomena in Silicon Nanowire Field‐Effect Transistor Biosensors

Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

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