Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Abstract

Silicon two-layer (TL) nanowire (NW) field-effect transistors (FETs) are fabricated by applying a CMOS-compatible top-down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p-type conductivity are studied in a wide temperature range (100-300 K). A random telegraph signal (RTS) noise as a special case of trapping-detrapping processes is registered as a dominant noise component at room temperature. A shift of the characteristic corner (rollover) frequency of the RTS noise to lower frequencies with temperature decreasing is observed. By performing analysis of temperature-dependent low-frequency noise, the activation energy and hole capture cross section of a single trap responsible for the RTS noise are estimated to be (0.29 AE 0.02 eV) and (2.22 AE 0.15) Â10 À18 cm 2 , respectively. Obtained values suggest that the trap can be attributed to a vacancy-boron complex. At the temperature below 200 K fabricated devices demonstrate a clear generation-recombination noise with power spectral density proportional to 1/f 3/2 . Such noise behavior provides the evidence of diffusion-assisted processes in two-layer nanowire structures. This confirms the contribution of high-doped top silicon layer to the transistor transport properties.

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

“…Unlike in all metal/insulator/metal devices previously studied, if the bias is held constant a cyclical filament formation and disruption at random times occurs (see Figure 5b). More importantly, the mean on/off current ratio statistically observed in Figure 5b is >100, which is the highest ever reported in the literature for a random signal of telegraphic characteristics when compared not only to other reports on h‐BN [ 12,37,47,54 ] but also TMOs, [ 11,52,55,67–72 ] ultra‐scaled transistors [ 73–78 ] and nanowires [ 79–87 ] (see Figure 5c). This behavior, which remains stable over time, cannot be strictly called RTN because this term has been always employed in the literature to refer to charge trapping and de‐trapping, while here it is related to ionic movement; hence, we propose to call it random telegraph signal (RTS)‐like current.…”

Advances in nanomaterial application in enzyme-based electrochemical biosensors: a review

“… 102 Thus, special signal processing algorithms should be often used to split noise and useful signal. 103 Antibodies are often used as bioreceptors in such nanowire-based biosensors, 104 but several enzymes were also tested. For example, GOx was immobilized on the surface of FET based on In 2 O 3 nanoribbons.…”

New Approach for Enhancing Sensitivity in Liquid‐Gated Nanowire FET Biosensors Under Optical Excitation

“…They might not only allow for studies and usage of new transport regimes but also a demonstration of several advantages, including a more sensitive, high-speed detection of biochemical signals [9][10][11][12][13][14] DOI: 10.1002/admt. 202301303 We have recently shown that singe-trap phenomena (STP) and noise properties of LG NW FETs might offer new time parameters [15][16][17][18][19][20][21] for biosensing applications. Using the capture time to a single trap near a semiconductor channel and the characteristic emission time enables sensitivity to be improved.…”

“…We have recently shown that singe‐trap phenomena (STP) and noise properties of LG NW FETs might offer new time parameters [ 15–21 ] for biosensing applications. Using the capture time to a single trap near a semiconductor channel and the characteristic emission time enables sensitivity to be improved.…”