Origin of noise in liquid-gated Si nanowire troponin biosensors

Kutovyi, Yurii; Zadorozhnyi, Ihor; Hlukhova, Hanna; Handziuk, Volodymyr; Petrychuk, M. V.; Ivanchuk, Andriy; Vitusevich, S. А.

doi:10.1088/1361-6528/aaaf9e

Cited by 28 publications

(30 citation statements)

References 40 publications

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“…Low‐resistive source/drain contact leads were formed by thermal evaporation of 200 nm aluminum followed by a lift‐off process and annealing process to achieve ohmic contact. Fabricated devices as well as enhancement mode Si TL NW FETs yield a random telegraph signal (RTS) noise with advanced characteristics when measuring with a liquid gate …”

Section: Introductionmentioning

confidence: 99%

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Kutovyi

Zadorozhnyi

Handziuk

et al. 2019

Physica Status Solidi (b)

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Silicon two-layer (TL) nanowire (NW) field-effect transistors (FETs) are fabricated by applying a CMOS-compatible top-down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p-type conductivity are studied in a wide temperature range (100-300 K). A random telegraph signal (RTS) noise as a special case of trapping-detrapping processes is registered as a dominant noise component at room temperature. A shift of the characteristic corner (rollover) frequency of the RTS noise to lower frequencies with temperature decreasing is observed. By performing analysis of temperature-dependent low-frequency noise, the activation energy and hole capture cross section of a single trap responsible for the RTS noise are estimated to be (0.29 AE 0.02 eV) and (2.22 AE 0.15) Â10 À18 cm 2 , respectively. Obtained values suggest that the trap can be attributed to a vacancy-boron complex. At the temperature below 200 K fabricated devices demonstrate a clear generation-recombination noise with power spectral density proportional to 1/f 3/2 . Such noise behavior provides the evidence of diffusion-assisted processes in two-layer nanowire structures. This confirms the contribution of high-doped top silicon layer to the transistor transport properties.

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Section: Introductionmentioning

confidence: 99%

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Kutovyi

Zadorozhnyi

Handziuk

et al. 2019

Physica Status Solidi (b)

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“…Detailed information on the impact of the aforementioned noise processes on the performance of bioFETs can be found in [186] and [187]. Moreover, experimental studies are provided in [188] on the noise resulted from the ion dynamic processes related to ligand-receptor binding events of a liquid-gated SiNW array FET by measuring the noise spectra of the device before and after binding of target molecules.…”

Section: ) Nanomaterial-based Artificial Mc-rx Architecturesmentioning

confidence: 99%

Transmitter and Receiver Architectures for Molecular Communications: A Survey on Physical Design With Modulation, Coding, and Detection Techniques

et al. 2019

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“…The metal contacts can be created close to the NWs ( Figure 5 a) or at a certain distance ( Figure 5 b). A sensor design with an intermediate highly doped silicon feed line allows the passivation by high-quality thermal oxide [ 27 ], while sensors with metal feed lines next to the NWs need to be passivated by CVD processes [ 22 ] or polyimide [ 59 ].…”

Section: Design and Fabrication Considerations Of Sinw-fet Biosensorsmentioning

confidence: 99%

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Tintelott

Pachauri

Ingebrandt

et al. 2021

Sensors

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Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. “Bottom-up” or “top-down” approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The “bottom-up” approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.

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Origin of noise in liquid-gated Si nanowire troponin biosensors

Cited by 28 publications

References 40 publications

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

Transmitter and Receiver Architectures for Molecular Communications: A Survey on Physical Design With Modulation, Coding, and Detection Techniques

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

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