Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Abstract

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2monolayer semiconductor

“…37 Several reports have demonstrated that gamma radiation treatments modify the material properties by the self-controlled process and this characteristic effect can be used to develop materials with statistically stabilized and desired properties. 38,39 In order to gain a deep insight into the origin of the magnetization observed in the monolayer WS 2 , as shown in Fig. 5 (a), we performed DFT calculations using the projector-Augmentedwave method implemented in the Vienna ab initio simulation package (VASP).…”

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

“…Silicon nanowire (NW) field‐effect transistors (FETs) are reliable and robust electronic devices with a huge potential in particular for applications in biosensors and bioelectronics due to the unique and tunable electrical properties of silicon nanowires . These devices demonstrate improved electrostatic control capabilities and outstanding transport properties, however there are still many critical issues such as short‐channel effects, increased low‐frequency noise, leakage current, and high‐field parasitic effects that give rise to new challenges in design and optimization of NW FET devices as well as in their practical applications including sensing . Among the above mentioned critical issues, an increased low‐frequency noise of scaled FETs is considered as a substantial drawback for their sensing applications determining resolution of the sensor .…”

Dual-Point Technique for Multi-Trap RTN Signal Extraction

“…When comes to Fig. 5(b), four current levels (i.e., L1, L2, L3, and L4) are clearly observed coming from the different trapping/de-trapping states (i.e., (00), (01), (10), and (11)) of TrapC and TrapD, respectively. As the gate voltage increases, there are only three current levels in Fig.…”

“…The RTN magnitudes including current fluctuation (i.e., ID) and threshold voltage fluctuation (i.e., Vth), have been recognized as dominant degradation factors affecting the performances of devices and circuits [6]- [8]. Moreover, understanding the voltage dependence of RTN magnitudes can provide valuable information in revealing the underlying physical mechanism and predicting time-dependent variability in circuit simulation [9], [10]. To extend the limited information within the measurement window, Franco et.…”