Dual-Point Technique for Multi-Trap RTN Signal Extraction

Zhan, Xuepeng; Xi, Yifang; Wang, Qianwen; Zhang, Weiqiang; Ji, Zhigang; Chen, Jiezhi

doi:10.1109/access.2020.2993612

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…Hence, a leakage current from source to drain through channel as well as gate to the channel through gate oxide layer is unavoidable. As a result recent experimental observations in the oscillations of drain current at both low and room temperatures confirms the origin of Random Telegraph Noise (RTN) that may reduce the performance of qubit gate operations [22][23][24][25][26] In most cases, compared to coherent time, the dephasing time of qubits in presence of noise is reduced by several orders of magnitude due to coupling of qubits to the environment. The reduction of dephasing time depends on the specific dynamical coupling sequence from where the principle of quantum mechanics is inevitably lost.…”

Section: Introductionmentioning

confidence: 85%

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

Jackson¹,

Prabhakar²,

Lal³

et al. 2022

Preprint

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We consider the problem of analyzing spin-flip qubit gate operation in presence of Random Telegraph Noise (RTN). Our broad approach is the following. We calculate the spin-flip probability of qubit driven by composite pulses, (Constant pulse (C-pulse), Quantum Well pulse (QW-pulse) and Barrier Potential pulse (BP-pulse)) in the presence of RTN using Feynman disentangling method. When composite pulses and RTN act in x-direction and z-direction respectively, we calculate the optimal time to achieve 100% spin-flip probability of qubit. We report the shortcut of spin-flip qubit, which can be achieved by using C-pulse, followed by BP-pulse and QW-pulse. When jumps time in RTN are very fast, tuning of perfect fidelity or spin-flip probability extends to large RTN correlation time. On the other hand, when the jumps in RTN are very slow, the BP-pulse can be used to recover the lost fidelities. Nevertheless, the fidelities of qubit gate operation are larger than 90%, regardless of RTN jumps environments which may be beneficial in quantum error correction. For more general case, we have tested several pulse sequences for achieving high fidelity quantum gates, where we have used the pulses acting in different directions. From the calculations, we find high fidelity of qubit gate operation in presence of RTN is achieved when QW-pulse, BP-pulse and C-pulse act in x-direction, y-direction and z-direction, respectively.

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Section: Introductionmentioning

confidence: 85%

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

Jackson¹,

Prabhakar²,

Lal³

et al. 2022

Preprint

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show abstract

“…Recently, for miniaturized devices down to nanometer sizes, complex RTSs with multiple distinct levels of states are frequently encountered, possibly induced from only a few countable traps [ 57 , 68 , 69 , 70 ]. Thus, a tool to assess multi-level RTS signals is required [ 69 , 71 ]. However, to our best knowledge, there are only a limited number of references providing systematic analyses of a few-trap RTS—an intermediary regime between a single-trap RTS and multi-trap

noise.…”

Section: Noise Processesmentioning

confidence: 99%

Material-Inherent Noise Sources in Quantum Information Architecture

Yang

Kim

2023

Materials

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NISQ is a representative keyword at present as an acronym for “noisy intermediate-scale quantum”, which identifies the current era of quantum information processing (QIP) technologies. QIP science and technologies aim to accomplish unprecedented performance in computation, communications, simulations, and sensing by exploiting the infinite capacity of parallelism, coherence, and entanglement as governing quantum mechanical principles. For the last several decades, quantum computing has reached to the technology readiness level 5, where components are integrated to build mid-sized commercial products. While this is a celebrated and triumphant achievement, we are still a great distance away from quantum-superior, fault-tolerant architecture. To reach this goal, we need to harness technologies that recognize undesirable factors to lower fidelity and induce errors from various sources of noise with controllable correction capabilities. This review surveys noisy processes arising from materials upon which several quantum architectures have been constructed, and it summarizes leading research activities in searching for origins of noise and noise reduction methods to build advanced, large-scale quantum technologies in the near future.

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“…With the aggressive scaling down of MuGFETs, BTI and HCI are not the only reliability issues in the MuGFET technologies. Reliability topics like electromigration [68,69] , device-todevice variation [70,71] , cycle-to-cycle variation [70] , random telegraph noise [72,73] , dielectric breakdown characteristics [74,75] etc. are also get more severe.…”

Section: Bias Temperature Instability and Hot Carrier Injectionmentioning

confidence: 99%

The past and future of multi-gate field-effect transistors: Process challenges and reliability issues

Sun

Zhang

et al. 2021

J. Semicond.

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This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process technologies and compares the device performance and reliability characteristics of the MuGFETs with the planar Si CMOS devices. Owing to the 3D wrapped gate structure, MuGFETs can suppress the SCEs and improve the ON-current performance due to the volume inversion of the channel region. As the Si CMOS technology pioneers to sub-10 nm nodes, the process challenges in terms of lithography capability, process integration controversies, performance variability etc. were also discussed in this work. Due to the severe self-heating effect in the MuGFETs, the ballistic transport and reliability characteristics were investigated. Future alternatives for the current Si MuGFET technology were discussed at the end of the paper. More work needs to be done to realize novel high mobility channel MuGFETs with better performance and reliability.

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Dual-Point Technique for Multi-Trap RTN Signal Extraction

Cited by 5 publications

References 26 publications

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

Material-Inherent Noise Sources in Quantum Information Architecture

The past and future of multi-gate field-effect transistors: Process challenges and reliability issues

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