Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

32-inch TFT-LCD Panel using the amorphous indium-galliumzinc-oxide (a-IGZO) thin-film transistors (TFTs) is demonstrated in this study. The size of 32-inch TFT-LCD driven by a-IGZO TFTs was the top two largest sizes in our limited information. Less report was larger than the size of 32-inch a-IGZO TFT-LCDs. To realize a-IGZO TFTs driving the large size TFT-LCD panel, bottom gate structure is proposed. High performance a-IGZO TFTs is achieved successfully to ligh-on the 32-inch LCD panel. Uniform electrical characteristic is obtained on the coplanar type TFTs. The field effect mobility is 5.16 cm 2 /Vs, threshold voltage is 0.5 V, sub-threshold swing is 0.38 V/decade, and on/off current ratio is 1.8 x 10 8 . After 1000 sec DC gate bias stress at -30 V, the threshold voltage shifts is less than 1.1 V.

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