32-inch TFT-LCD Panel using the amorphous indium-galliumzinc-oxide (a-IGZO) thin-film transistors (TFTs) is demonstrated in this study. The size of 32-inch TFT-LCD driven by a-IGZO TFTs was the top two largest sizes in our limited information. Less report was larger than the size of 32-inch a-IGZO TFT-LCDs. To realize a-IGZO TFTs driving the large size TFT-LCD panel, bottom gate structure is proposed. High performance a-IGZO TFTs is achieved successfully to ligh-on the 32-inch LCD panel. Uniform electrical characteristic is obtained on the coplanar type TFTs. The field effect mobility is 5.16 cm 2 /Vs, threshold voltage is 0.5 V, sub-threshold swing is 0.38 V/decade, and on/off current ratio is 1.8 x 10 8 . After 1000 sec DC gate bias stress at -30 V, the threshold voltage shifts is less than 1.1 V.
We demonstrated a defect free 32-inch large scaled amorphous indium-gallium-zinc-oxide based activematrix organic light-emitting diode television panel. The panel achieves good image quality, such as high contrast ratio, a wide viewing angle, and fast response time, and the module thickness is only 3 mm. The thin film transistor shows excellent characteristic and the compensation pixel circuit is used. The side by side organic light-emitting diode device is realized by fine metal mask.
We reported amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) TFT OLED TV panel development in AUO. The Generation 6 (G6) threshold voltage uniformity can be lower than 0.8V. The RGB side-by-side OLED patterning was realized by fine metal mask. By the application of a source follower connection pixel compensation circuit, the panels driven by AUO engine show excellent characteristics. For future product performance requirement, amorphous Indium-Tin-Zinc-Oxide (a-ITZO) TFT was developing, high mobility as 33.2 cm2/Vs was achieved. Metal-organic chemical vapor deposition (MOCVD) system was also used to improve the mobility of IGZO TFT. To improve manufacturing efficiency of OLED process, inkjet printing technology is also under development in AUO.
AMOLED displays based on metal oxide film as active channel layer are fabricated. To achieve cost‐competitive process in OLED manufacturing, solution‐processed HIL, HTL and pixilated EML (RGB) layers followed by evaporation process for other layers are demonstrated in this work. Meanwhile, the AMOLED backplanes possessing low power consumption and high frequency were fabricated on metal oxide TFTs with high mobility (23.13 cm2/Vs) technology. A 14” qHD AMOLED in 79 ppi‐resolution was realized with IGZO based active matrix panel.
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