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This letter investigates asymmetrical degradation behavior induced by the self-heating effect in InGaZnO thin-film transistors. Both the surrounding oxide and other thermal insulating material, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO thin-film transistors. The heated channel layer enhances threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effect. Moreover, a non-uniform distribution of channel carrier concentration leads to an uneven temperature distribution through the InGaZnO active layer and results in the asymmetrical degradation behavior after self-heating operation.

AMOLED displays based on metal oxide film as active channel layer are fabricated. To achieve cost‐competitive process in OLED manufacturing, solution‐processed HIL, HTL and pixilated EML (RGB) layers followed by evaporation process for other layers are demonstrated in this work. Meanwhile, the AMOLED backplanes possessing low power consumption and high frequency were fabricated on metal oxide TFTs with high mobility (23.13 cm2/Vs) technology. A 14” qHD AMOLED in 79 ppi‐resolution was realized with IGZO based active matrix panel.