Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors

Hsieh, Tien-Yu; Chang, Ting‐Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te; Chung, Yi‐Chen; Ting, Hung‐Che; Chen, Chia-Yu

doi:10.1063/1.4723573

Cited by 28 publications

(16 citation statements)

References 16 publications

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“…Such a study of IGZO thermal conductivity is useful for effective thermal management in IGZO devices, such as thin-film transistors in display backplanes. Knowledge of the thermal conductivity helps to model heat generation within that active layer and the thermal distribution throughout the device . Additionally, IGZO has been proposed as a thermoelectric candidate, in a similar fashion to other transparent oxides such as InZnO.…”

Section: Introductionmentioning

confidence: 99%

“…Knowledge of the thermal conductivity helps to model heat generation within that active layer and the thermal distribution throughout the device. 9 Additionally, IGZO has been proposed as a thermoelectric candidate, in a similar fashion to other transparent oxides such as 10 InZnO. IGZO may have a competitive thermoelectric figure of merit 11 compared with other oxide materials, suggesting the intriguing possibility of "invisible thermoelectric devices" made with transparent oxides.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity

Cui¹,

Zeng²,

Keane

et al. 2016

J. Phys. Chem. C

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The cross-plane thermal conductivity of In-GaZnO (IGZO) thin films was measured using the 3ω technique from 18 to 300 K. The studied morphologies include amorphous (a-IGZO), semicrystalline (semi-c-IGZO), and c-axis-aligned single-crystal-like IGZO (c-IGZO) grown by pulsed laser deposition (PLD) as well as a-IGZO deposited by sputtering and by solution combustion processing. The atomic structures of the amorphous and crystalline films were simulated with ab initio molecular dynamics. The film quality and texturing information was assessed by X-ray diffraction and grazing incidence wide-angle X-ray scattering. X-ray reflectivity was also conducted to quantify film densities and porosities. All the high-density films exhibit an empirical powerlaw temperature dependence of the thermal conductivity κ ∼ T 0.6 in the specified temperature range. Among the PLD dense films, semi-c-IGZO exhibits the highest thermal conductivity, remarkably exceeding both films with more order (c-IGZO) and with less order (a-IGZO) by a factor of 4. The less dense combustion-synthesized films, on the other hand, exhibited lower thermal conductivity, quantitatively consistent with a porous film using either an effective medium or percolation model. All samples are consistent with the porosity-adapted Cahill−Pohl (p-CP) model of minimum thermal conductivity.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity

Cui¹,

Zeng²,

Keane

et al. 2016

J. Phys. Chem. C

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“…In [8]- [10], the stability of a-IGZO TFTs was studied under a drain bias applied simultaneously with gate bias, i.e., under high drain current stress. The instability mechanism was explained with electron trapping within the IGZO channel layer [8] or with electron injection in trap levels located within the gate insulator [9], [10]. The primary aim of this letter is to clarify the instability mechanism of a-IGZO TFTs Manuscript under high drain current stress using low-frequency noise measurements.…”

Section: Introductionmentioning

confidence: 99%

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

Tsormpatzoglou

Hastas

Mahmoudabadi

et al. 2013

IEEE Electron Device Lett.

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The instability of amorphous InGaZnO thin-film transistors is investigated under high drain current stress by applying bias voltages to both gate and drain electrodes. The instability involves positive threshold voltage shift, reduction of the ON-state current and recovery of the transfer characteristic toward the prestressed state when the stressed device is unbiased in dark at room temperature for an extended period. This instability behavior is investigated by low-frequency noise measurements before and after stress in the forward and reverse configurations. The overall results are consistent with the instability mechanism involving electron trapping in the existing donor-like gate oxide trap states near the source side.Index Terms-Amorphous IGZO (a-IGZO), donor-like traps, high-current stress, low-frequency noise, thin-film transistors (TFTs).

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“…Even though a-IGZO TFTs has been developed to such an extent that they can be applied to commercialized backplanes in flat panel displays such as active-matrix liquid-crystal display (AMLCD) and active-matrix organic light-emitting diode (AMOLED) [ 7 , 8 ], the reliability issues associated with electrical field, temperature, and light induced instabilities are still challenging issues for the mass production of reliable active-matrix flatpanel displays (AMFPDs) based on a-IGZO TFTs [ 9 , 10 , 11 , 12 , 13 , 14 ]. Among the various parameters that determine the reliability of a-IGZO TFTs, the geometrical shape of the channel for a-IGZO TFTs can be one of the key design parameters to determine the electrical reliability of a-IGZO TFTs [ 15 , 16 , 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Seo

Kim

et al. 2020

Micromachines

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Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. Source and drain (S/D) electrode asymmetry and vertical E-field effects on device instability are neglibible, whereas the lateral E-field effects significantly affect device instability, particularly for zigzag channel shape, compared to circular and U-type TFTs. Moreover, charge trapping time (τ) for zigzag-type a-IGZO TFTs is extracted as 3.8 × 104, which is at least three-times smaller than those of other channel-type a-IGZO TFTs, hinting that local E-field enhancement can critically affect the device reliability. The Technology Computer Aided Design (TCAD) simulation results reveal the locally enhanced E-field at both corner region in the channel in a quantitative mode and its correlation with hemisphere radius (ρ) values.

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Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors

Cited by 28 publications

References 16 publications

Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity

Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

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