With the surge in perovskite research, practical features for future applications are desired to be secured, but the reliability of the materials and the use of hazardous Pb are longstanding problems. Here, an air‐stable Cs2SnI6 (CSI) is prepared via diluted hydriodic acid solvent‐based precursor optimization during scalable hydrothermal growth. Materials characterization is performed using various elemental peak analyses and crystallographic identification. The resulting CSI exhibits long‐term operating stability over 6 months, i) at elevated temperatures, ii) in ambient air, and iii) under light illumination from UV to near‐infrared. More importantly, to demonstrate an intriguing class of applications up to system level, physically detachable CSI photodetector arrays (PD‐arrays), integrated with micro‐light‐emitting‐diodes (μ‐LEDs) arrays, are successfully fabricated. In addition, 3 × 3 flexible CSI PDs are fully operational, even in air, and their spatial uniformity in pixels is quantitatively evaluated. The charge‐transport mechanisms of the CSI PDs under light and elevated temperature are assessed via temperature‐dependent characterization from 148 to 373 K, implying the involvement of 3D variable‐range hopping. Multicycle evaluation of the CSI PD‐arrays confirms their operational stability in AC and DC modes, demonstrating this platform's potential benefit for wireless optical interconnection in advanced Si technology.
Photosensitive complementary inverters, composed of multilayered molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2), are demonstrated for the applications that require low power consumption and excellent signal‐to‐noise ratio (SNR). The photosensitive characteristics of MoS2, along with the negligible photosensitivity of MoTe2, successfully render them applicable to the light‐to‐frequency conversion circuits that enable high SNR immunity. Under blue light‐emitting diodes (LEDs), the low noise margin and transition width for the voltage transfer characteristics in complementary inverters significantly improve from 1.29 to 1.49 V and 0.24 to 0.31 V, respectively, as compared with those of inverters in the dark. The experimental demonstration of photosensitive inverters and their electrical validations on proposed concepts, supported from SPICE (i.e., simulation program with integrated circuit emphasis) simulation, are systematically obtained, substantiating that this platform can be one of the core parts for future Internet of Things (IOT) applications, which simultaneously demand both ultralow power and robustness on security.
In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS 2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS 2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS 2 FETs in an enhancement mode with preservation of electrical para meters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS 2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 V DD . More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS 2 FETs, stably demonstrate 120 cd m −2 at the gateto-source voltage of 5 V, exhibiting promising opportunities for future display application.
Field-Effect Transistors
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.