Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Hsieh, Tien-Yu; Chang, Ting‐Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te; Jian, Fu-Yen; Chung, Yi‐Chen; Ting, Hung‐Che; Chen, Chia-Yu

doi:10.1109/led.2012.2193112

Cited by 44 publications

(20 citation statements)

References 17 publications

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“…2(d)), and this phenomenon indicates the asymmetric V T is formed in each near the source and drain after the stress. Additionally, SS degradation is the clue to predict occurring of the asymmetric degradation [9]. We have come to understand abovementioned phenomena as follows.…”

Section: Resultsmentioning

confidence: 99%

Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors

Kang¹,

Jang²,

Kim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high V GS /low V DS and low V GS /high V DS stress conditions through incorporating a forward/reverse V GS sweep and a low/high V DS readout conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high V GS /low V DS stress is applied. On the other hand, when low V GS /high V DS stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high V GS /low V DS stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low V GS /high V DS stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive V GS /V DS stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

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Section: Resultsmentioning

confidence: 99%

Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors

Kang¹,

Jang²,

Kim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…Transparent amorphous oxide semiconductors (TAOS) have considerable technological interests because of their high carrier mobility (10-30 cm 2 /V s), large-area uniformity and good transparency in visible region and applicability for the fabrication at room temperature [1][2][3]. In particular, amorphous InGaZnO (a-IGZO) is the most promising TAOS material as the channel layer in thin-film transistors (TFTs) for active matrix flat-panel display due to its high field effect mobility [4][5][6]. This high mobility originates from extended spherical s orbitals of heavy metal cations forming undistorted electron conduction path [7].…”

Section: Introductionmentioning

confidence: 99%

Paper No P38: Electrical and Optical Stabilities of Amorphous InGaZnO Thin Films for Flexible Sensing Transistors

Jiang

et al. 2013

Symp Digest of Tech Papers

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Amorphous oxide semiconductor InGaZnO (a-IGZO) thin films were deposited on glass and sapphire substrates using RF magnetron sputtering at room temperature. H 2 annealing effect on the electrical conduction, optical transmittance, and structural properties of a-IGZO films has been systematically studied. Temperature-dependent electrical conductivity of a-IGZO films exhibited n-type degenerated conduction behavior in the range of 10-300 K. Electrical properties of the films do not fit with variable range hopping carrier transport model. Optical transmission of a-IGZO films has been enhanced by H 2 annealing at elevated temperatures. Fourier-Transform Infrared Spectroscopy analysis indicated formation of O-H bonding state in H 2 -annealed a-IGZO films which is thermally stable up to 300 C. Electron concentration of a-IGZO films decreases with annealing temperature above 300 C resulting from the reduced H incorporation from OH absorption.

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“…Although ZnO-based TFTs have demonstrated excellent performance, there are still some reliability problems in these devices [3], [4]. The electrical degradation of devices under the gate bias stress has been mainly contributed by the charge trapping model and the influence of the ambient atmosphere due to the electric field-induced oxygen adsorption [5].…”

Section: Introductionmentioning

confidence: 99%

P.15: Influence of Photo‐Thermal Pre‐treatment on Electrical Characteristics and Reliability of Zn‐Sn‐O Thin‐Film Transistors

Chen

Chang

et al. 2013

Symp Digest of Tech Papers

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This study presents the influence of photo‐thermal pre‐treatment on the electrical characteristic and bias‐induced instability of amorphous Zn‐Sn‐O thin film transistors. Even in the vacuum ambient, the passivation‐free device with photo‐thermal pre‐treatment shows more stability after stress than that without pre‐treatment. This indicates pre‐treatment should be conducted before passivation process.

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Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Cited by 44 publications

References 17 publications

Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors

Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors

Paper No P38: Electrical and Optical Stabilities of Amorphous InGaZnO Thin Films for Flexible Sensing Transistors

P.15: Influence of Photo‐Thermal Pre‐treatment on Electrical Characteristics and Reliability of Zn‐Sn‐O Thin‐Film Transistors

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Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Cited by 44 publications

References 17 publications

Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDSand Low VGS/High VDSin Amorphous InGaZnO Thin-Film Transistors

Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDSand Low VGS/High VDSin Amorphous InGaZnO Thin-Film Transistors

Paper No P38: Electrical and Optical Stabilities of Amorphous InGaZnO Thin Films for Flexible Sensing Transistors

P.15: Influence of Photo‐Thermal Pre‐treatment on Electrical Characteristics and Reliability of Zn‐Sn‐O Thin‐Film Transistors

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Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors

Comparative Analysis on Positive Bias Stress-Induced Instability under High V_GS/Low V_DSand Low V_GS/High V_DSin Amorphous InGaZnO Thin-Film Transistors