Abstract:This study presents the influence of photo‐thermal pre‐treatment on the electrical characteristic and bias‐induced instability of amorphous Zn‐Sn‐O thin film transistors. Even in the vacuum ambient, the passivation‐free device with photo‐thermal pre‐treatment shows more stability after stress than that without pre‐treatment. This indicates pre‐treatment should be conducted before passivation process.
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