2012
DOI: 10.1002/j.2168-0159.2012.tb05718.x
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9.3: A 32‐inch Active‐Matrix Organic Light‐Emitting Diode Television Panel Driving by Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors

Abstract: We demonstrated a defect free 32-inch large scaled amorphous indium-gallium-zinc-oxide based activematrix organic light-emitting diode television panel. The panel achieves good image quality, such as high contrast ratio, a wide viewing angle, and fast response time, and the module thickness is only 3 mm. The thin film transistor shows excellent characteristic and the compensation pixel circuit is used. The side by side organic light-emitting diode device is realized by fine metal mask.

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Cited by 16 publications
(9 citation statements)
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“…Using the knowledge gained from fabricating the 32-inch IGZO LCD panel, a 65-inch large-scale a-IGZO AMLCD panel was published at 2010 and 2011 [1]. In 2012, a 32-inch IGZO AMOLED television panel was demonstrated at the SID international symposium [2]. On this prototype, the OLED device had a bottom-emitting architecture with common transporting layers that had superior image quality.…”
Section: Introductionmentioning
confidence: 98%
“…Using the knowledge gained from fabricating the 32-inch IGZO LCD panel, a 65-inch large-scale a-IGZO AMLCD panel was published at 2010 and 2011 [1]. In 2012, a 32-inch IGZO AMOLED television panel was demonstrated at the SID international symposium [2]. On this prototype, the OLED device had a bottom-emitting architecture with common transporting layers that had superior image quality.…”
Section: Introductionmentioning
confidence: 98%
“…Solution processing has many advantages, including large-area processing and low cost [5]. Since the oxide TFTs have n-type characteristics, inverted QLED structure is more suitable for fabrication of AMD [6]. Consequently, the inverted QLED structure with bottom cathode directly connecting to the n-type oxide TFT is necessary than the conventional QLED structure.…”
Section: Introductionmentioning
confidence: 99%
“…This technology does not require a sophisticated FMM as well as misalign margin in pixel design and has excellent scalability over Gen. 8‐sized substrate with high productivity and process yield. Other way is oxide TFTs, which has been intensively developed to meet the requirement of large‐sized back plane for OLED TV . Oxide TFTs have the advantages in terms of scalability (>Gen. 8) and can be compatible with amorphous silicon (a‐Si) TFT regarding the production line.…”
Section: Introductionmentioning
confidence: 99%
“…Other way is oxide TFTs, which has been intensively developed to meet the requirement of large-sized back plane for OLED TV. 3,4 Oxide TFTs have the advantages in terms of scalability (>Gen. 8) and can be compatible with amorphous silicon (a-Si) TFT regarding the production line. It is possible for WOLEDs and oxide TFTs to produce large-sized OLED TV with higher yield and lower cost.…”
Section: Introductionmentioning
confidence: 99%