“…Amorphous oxide semiconductor (AOS) possesses many advantages such as large electron mobilities for amorphous semiconductor >10 cm 2 /Vs, high transparency in the visible region, low-temperature process compatibility down to room temperature (RT), and good uniformity over large area; 1), 2) therefore, it is expected for a channel material of a thin-film transistor (TFT) in next-generation flat-panel displays such as electronic papers, 3) organic light-emitting-diode displays, 4) liquid-crystal displays (LCD), 5) flexible displays, 6) and transparent displays. Among the AOS materials, amorphous InGaZnO (a-IGZO) is the most widely-investigated AOS and most close to a wide commercialization; indeed, a-IGZO TFT is commercialized in a retina display of new iPad in March, 2012.…”