51.1: Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with High Mobility and Reliability

Abstract

Abstract

Oxide TFTs: A Progress Report

“…I think that it is highly likely that a future oxide‐TFT material will contain tin as a constituent element, since incorporation of tin will allow oxide wet etchability to be dramatically engineered over a broad range of selectivity 10 . In this respect, recent industrial R&D involving ITZO 11 and IGZTO 12 , 13 is intriguing. Next, and most importantly, the flat‐panel‐display industry seems to have an insatiable desire for ever‐increasing TFT‐channel‐layer electron mobility (as well as hole mobility, if it could only get it).…”

Threshold voltage tuning of IGZTO thin-film transistors deposited by RF sputtering for high-resolution flexible displays using deep ultraviolet light

“…18,19 IGZTO has mobility of approximately 20 cm 2 V −1 s −1 as the addition of Sn 4+ , which has a similar electron orbital (5S orbital) to In 3+ , forms an efficient conduction pathway and improves the mass density inside the thin film. 20,21 However, AOSs such as IGZO and IGZTO increase mobility when general thermal annealing is applied but cause a large negative V th shift. 22 The driving voltage of the display is increased, increasing power consumption and limiting application in portable devices.…”