Articles you may be interested inLow-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics Appl. Phys. Lett. 96, 043114 (2010); 10.1063/1.3294325 ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators Appl. Phys. Lett. 90, 253504 (2007); 10.1063/1.2749841 ZnO-based thin-film transistors of optimal device performance

Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5-15 and 20-50 cm 2 V −1 s −1 are obtained for devices post-deposition annealed at 300 and 600°C, respectively. TTFTs processed at 300 and 600°C yield devices with turn-on voltage of 0-15 and −5-5 V, respectively. Under both processing conditions, a drain current onto off ratio greater than 10 7 is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with ͑n −1͒d 10 ns 0 ͑n ജ 4͒ electronic configurations.

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A simple, low-cost, and nontoxic aqueous ink chemistry is described for digital printing of ZnO films. Selective design through controlled precipitation, purification, and dissolution affords an aqueous Zn(OH)(x)(NH(3))(y)((2-x)+) solution that is stable in storage, yet promptly decomposes at temperatures below 150 degrees C to form wurtzite ZnO. Dense, high-quality, polycrystalline ZnO films are deposited by ink-jet printing and spin-coating, and film structure is elucidated via X-ray diffraction and electron microscopy. Semiconductor film functionality and quality are examined through integration in bottom-gate thin-film transistors. Enhancement-mode TFTs with ink-jet printed ZnO channels annealed at 300 degrees C are found to exhibit strong field effect and excellent current saturation in tandem with incremental mobilities from 4-6 cm(2) V(-1) s(-1). Spin-coated ZnO semiconductors processed at 150 degrees C are integrated with solution-deposited aluminum oxide phosphate dielectrics in functional transistors, demonstrating both high performance, i.e., mobilities up to 1.8 cm(2) V(-1) s(-1), and the potential for low-temperature solution processing of all-oxide electronics.

High mobility, n-type transparent thin-film transistors ͑TTFTs͒ with a zinc indium oxide ͑ZIO͒ channel layer are reported. Such devices are highly transparent with ϳ85% optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600°C operate in depletion-mode with threshold voltages −20 to −10 V and turn-on voltages ϳ3 V less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of 45-55 cm 2 V −1 s −1 , drain current onto off ratios of ϳ10 6 , and inverse subthreshold slopes of ϳ0.8 V / decade. In contrast, ZIO TTFTs annealed at 300°C typically operate in enhancement-mode with threshold voltages of 0-10 V and turn-on voltages 1-2 V less than the threshold voltage. These 300°C devices exhibit excellent drain-current saturation, peak incremental channel mobilities of 10-30 cm 2 V −1 s −1 , drain current onto off ratios of ϳ10 6 , and inverse subthreshold slopes of ϳ0.3 V / decade. ZIO TTFTs with the channel layer deposited near room temperature are also demonstrated. X-ray diffraction analysis indicates the channel layers of ZIO TTFTs to be amorphous for annealing temperatures up to 500°C and polycrystalline at 600°C. Low temperature processed ZIO is an example of a class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with ͑n −1͒d 10 ns 0 ͑n ജ 4͒ electronic configurations.