Development of IGZO TFTs and their applications to next‐generation flat‐panel displays

Abstract

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

“…R ECENTLY, ZnO-based multicomponent oxide thin-film transistors (TFTs), such as InGaZnO [1]- [3], HfInZnO [4], and MgInZnO [5], have been recently shown to be attractive alternatives to conventional silicon-based TFTs due to their superior electrical properties, transparency, and large-area applications [1]- [6]. Furthermore, compared to the vacuum processing, solution processing of those materials provides great advantages in cost and throughput due to its simplicity.…”

Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

“…Amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) have excellent characteristics, such as high mobility, low off-current, steep subthreshold swings, excellent uniformity, and low temperature fabrication. [1][2][3][4] They are extensively investigated for future application in next generation displays, such as active matrix organic light emitting diode (AMOLED) displays which exhibits superior performances in viewing angle, response time, luminance brightness, contrast ratio, and low power consumption. 5 To achieve such products, thin film transistors are one of the key devices in the circuitry to control the pixel elements.…”

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

“…The InGaZnO (IGZO) compound in amorphous state can reach a high mobility, which has been proposed for thin film transistor application [1][2][3][4][5][6][7][8][9][10][11][12]. As well known, the metal-oxide IGZO semiconductor was deposited by physical vapor deposition (PVD) such as sputtering.…”