We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO 4 ͑a-IGZO͒ for device simulation of a-IGZO thin-film transistors ͑TFTs͒ operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.

SummaryThe outermost layer of the Bacillus anthracis spore consists of an exosporium comprised of two distinct layers, an outer hair-like nap layer and an internal basal layer. The hair-like nap is primarily comprised of the glycosylated collagen-like protein BclA. BclA is found in a trimeric form in close association with many other exosporium proteins in high-molecular weight complexes. We previously had characterized an N-terminal sequence of BclA that is sufficient for incorporation into the exosporium. Here we utilized site-directed mutagenesis to identify BclA residues critical to two steps in this process, positioning of the protein at the site of the developing exosporium basal layer and stable incorporation which includes a proteolytic cleavage of BclA after residue 19. The BxpB (ExsFA) protein is known to be important for proper incorporation of BclA onto the exosporium. BxpB and BclA were found to be expressed at the same time in sporulating cells of B. anthracis and immediately colocalize to high-molecular weight complexes. The BxpB protein was found to be in close proximity to the BclA NTD. BxpB and BclA are co-dependent for exosporium incorporation, with the BclA NTD being sufficient to deliver BxpB to the exosporium.

Scaling behaviors of ZnO transparent thin-film transistors (TTFTs) have been studied by fabricating series of miniaturized ZnO TTFTs having various channel widths and lengths. Mobility of >8cm2∕Vs and on/off ratio of up to 107 are achieved with these TTFTs. Results show that these ZnO TTFTs retain rather well-behaved transistor characteristics down to the channel length of ∼5μm, rendering possible high-resolution applications. More apparent short-channel effects (e.g., lowering of threshold voltages, degradation of the subthreshold slope with the decrease of the channel length and the increase of the drain voltage, loss of hard saturation, etc.) are observed when the channel length is reduced below 5μm.