Scaling behavior of ZnO transparent thin-film transistors

Hsieh, Hsing‐Hung; Wu, Chung‐Chih

doi:10.1063/1.2235895

Cited by 127 publications

(83 citation statements)

References 13 publications

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“…3(a) for the 1.3-µm transistor suggests the presence of short-channel effects. Similar behavior has been observed in short-channel ZnO TFTs [11]. At V G = 10 V and V D = 5 V, drain currents of 110 and 8.8 nA are obtained for L = 1.3 and 18.6 µm, respectively.…”

Section: Device Fabricationsupporting

confidence: 62%

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

Sultan

Sun

Clark

et al. 2012

IEEE Electron Device Lett.

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Abstract-Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO 2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3-18.6 µm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ≥75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable I ON /I OFF ratio of 2 × 10 6 is obtained.Index Terms-Atomic layer deposition (ALD), field-effect transistor (FET), nanowire, remote plasma, top-down fabrication, ZnO.

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Section: Device Fabricationsupporting

confidence: 62%

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

Sultan

Sun

Clark

et al. 2012

IEEE Electron Device Lett.

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“…The IV group semiconductors as well as III-V semiconducting materials are excluded here due to the high temperature of growing and dopants activation. 13 The most frequently used methods of growing of zinc oxide for electronic applications are magnetron sputtering [14][15][16] and pulsed laser deposition. 17,18 The first one, when applied at LT, requires a postgrowth annealing and does not lead to appropriate electrical parameters.…”

Section: Introductionmentioning

confidence: 99%

ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

Guziewicz

Godlewski

Krajewski

et al. 2009

Journal of Applied Physics

117

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We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with a low thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain films with controllable electrical parameters, from heavily n-type to the resistive ones. Optimization of the growth process together with the low temperature deposition led to ZnO thin films, in which no defect-related photoluminescence bands are observed. Such films show anticorrelation between mobility and free-electron concentration, which indicates that low n electron concentration is a result of lower number of defects rather than the self-compensation effect.

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“…6 and a field effect mobility μ FE of ∼2 cm 2 /Vs can be extracted from the dependence of I D on V GS in the saturation regime [4]. The TFT was subsequently heat treated at 300…”

Section: Resultsmentioning

confidence: 99%

Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

Yang

Lü

Wong

2012

IEEE Trans. Electron Devices

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Abstract-Because of the rapid diffusion of hydrogen in zinc oxide even at a relatively low temperature, zinc-oxide-based thinfilm transistors (TFTs) with hydrogen-doped source/drain regions suffer from degraded thermal stability. The use of boron, which is a heavier and a more slowly diffusing dopant, is systematically investigated as a replacement of hydrogen. Its effectiveness as a dopant has been studied in terms of a range of process conditions, including its implantation dosage and the subsequent heat treatment temperature, time, and ambience. The lowest resistivity of 2 mΩ-cm has been obtained at a boron dose of 10 16 /cm 2 . Self-aligned top-gated zinc-oxide TFTs with source/drain regions doped with implanted boron are shown to be more stable than those doped with hydrogen, even when subjected to the relatively high temperature needed for the formation of a good-quality passivation layer.

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Scaling behavior of ZnO transparent thin-film transistors

Cited by 127 publications

References 13 publications

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

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