We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100–170°C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100°C. Time of flight–secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100°C exhibit a high Ion∕Ioff ratio (∼107) and an encouraging intrinsic channel mobility (∼1cm2∕Vs).

The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10 15 cm -3 , while mobility of electrons is between 20 and 50 cm 2 /V·s. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100 o C which makes them appropriate for deposition on organic substrates.

We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with a low thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain films with controllable electrical parameters, from heavily n-type to the resistive ones. Optimization of the growth process together with the low temperature deposition led to ZnO thin films, in which no defect-related photoluminescence bands are observed. Such films show anticorrelation between mobility and free-electron concentration, which indicates that low n electron concentration is a result of lower number of defects rather than the self-compensation effect.

We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 9 10 -4 Xcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.

The electronic structure of the first Pu-based superconductor PuCoGa 5 is explored using photoelectron spectroscopy and a novel theoretical scheme. Exceptional agreement between calculation and experiment defines a path forward for understanding electronic structure aspects of Pu-based materials. The photoemission results show two separate regions of 5f electron spectral intensity, one at the Fermi energy and another centered 1.2 eV below the Fermi level. The results for PuCoGa 5 clearly indicate 5f electron behavior on the threshold between localized and itinerant. Comparisons to delta phase Pu metal show a broader framework for understanding the fundamental electronic properties of the Pu 5f levels in general within two configurations, one localized and one itinerant. PACS: 71.27.+a,71.28.+d, The recent discovery of PuCoGa 5 , the first Pu-based superconductor, with a T C =18.5 K and unconventional superconductivity demonstrates the rich and complex nature of Pu-based materials [1]. The role of the 5f electrons in bonding and hybridization is intimately intertwined with the wide range of ground state properties found in actinide materials including enhanced mass, magnetism, superconductivity, as well as spin and charge density waves. Within the actinide series, Pu occupies the position between the clearly hybridized 5f states of uranium [2] and clearly localized 5f states of americium[3] which due to its J=0 ground state is a superconductor. Pu defines the localized/itinerant boundary for the 5f electrons in the actinides [4,5]. There have been several recent papers reporting photoemission [6,8,7,9] and electronic structure calculations [4,5,10,11,12,13,14] for the fcc (δ ) phase of Pu metal. A classic failure of density functional theory (DFT) within the local density approximation (LDA) or generalized gradient approximation (GGA) is observed in the case of δ -Pu with the volume from LDA falling over 25% short (GGA only slightly better) of the experimental volume in the largest discrepancy to date in DFT for a crystal.To accommodate the large volume of the delta phase of Pu metal, there have been magnetically ordered electronic structures proposed which, to some degree, effectively localize 5f electrons, reducing the contribution to the chemical bonding and increasing the volume[10], however there is no experimental evidence for magnetism in δ -Pu [15]. Another approach used for δ -Pu is the dynamical mean field theory (DMFT) which may offer promise with further development [11]. Currently the agreement between DMFT and experiment is weak with the PES shown in Ref.[11] being more of an idealized representation than actual data. The link between δ -Pu metal and PuCoGa 5 is strong and follows the same path as the family of Ce-based heavy fermion-superconductors (CeMIn 5 , M=Co, Rh, Ir) [16] having the cubic CeIn 3 as the root crystal structure. Here we have δ -Pu as the parent cubic phase structure with Ga substituting on the face centers to form PuGa 3 and insertion of the CoGa 2 layer into the cubic s...

No abstract

We present a comparison between the screened hybrid density functional theory of Heyd, Scuseria, and Enzerhof (HSE06) and high-resolution photoemission (PES) measurement on a single crystal of UO(2). Angle-resolved photoemission data show a slight dispersion in the f-orbital derived bands in good agreement with the HSE band structure. The effect of spin-orbit coupling on the HSE band gap has also been calculated and found to be negligible.

No abstract