We report on the zinc oxide (ZnO) thin films obtained by the atomic layer deposition (ALD) method using diethyl zinc and water precursors, which allowed us to lower deposition temperature to below 200 °C. The so-obtained “as grown” ZnO layers are polycrystalline and show excitonic photoluminescence (PL) at room temperature, even if the deposition temperature was lowered down to 100 °C. Defect-related PL bands are of low intensity and are absent for layers grown at 140−200 °C. This is evidence that extremely low temperature growth by ALD can result in high quality ZnO thin films with inefficient nonradiative decay channels and with thermodynamically blocked self-compensation processes.

We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100–170°C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100°C. Time of flight–secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100°C exhibit a high Ion∕Ioff ratio (∼107) and an encouraging intrinsic channel mobility (∼1cm2∕Vs).

We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce large redshifts of the photoluminescence energy position and dramatically increase the carrier lifetime as the quantum well thickness increases.

Rare-earth-doped nanoparticles are promising materials for fluorescent labeling, as they are characterized by a high Stokes shift, narrow emission spectra, long lifetimes, minimized photobleaching, and low toxicity. We examined the structural and optical properties of europium-doped gadolinium oxide nanoparticles synthesized by the flame pyrolysis method, with specific emphasis on full spectral characterization and fluorescence kinetics. The emission-excitation characterization revealed the presence of predominantly monoclinic but also highly luminescent cubic phases with a prominent oxygen-to-europium charge-transfer band in the 230-260 nm range. A broad emission band in the visible region, corresponding to a similar band in undoped Gd(2)O(3), related to the matrix surface defects, was observed in time-gated spectroscopy of doped nanopowders. All of the examined nanopowders showed very short decay components, on the order of 2 ns, and much longer millisecond decay times characteristic of lanthanide ions. At intermediate times, on the order of 20-100 ns, a complex behavior of the decay was observed, indicative of progressive energy transfer to the lanthanide ion, which varied with different intrashell transitions. Structural characterization data by means of XRD measurements allowed for unambiguous determination of the Eu:Gd(2)O(3) crystallographic structure and cell dimensions to be consistent with a predominantly monoclinic phase.