Efficient light emission was obtained in a silole-based organic light-emitting diode. A high luminous current efficiency of 20 cd/A, corresponding to an external quantum efficiency of 8%, was achieved. The apparent violation of the upper theoretical limit of 5.5% for the external quantum efficiency of a singlet emitter is discussed. With a suitably designed cathode, a high power efficiency of ∼14 lm/W was obtained. A strong dependence of the power efficiency on the thickness of Alq3 layer is also observed and explained.

A new technology to pattern surface charges, either negatively or positively, using a standard photolithography process is introduced. A positively charged poly(allylamine hydrochloride) (PAH) layer is coated onto a negatively charged silicon oxide surface by electrostatic self-assembly (ESA). Combined with photolithography in a lift-off-based process, several different surface charge patterns were successfully produced. Due to definition of the pattern by photolithography, no limitations in the pattern geometry exist. Any surface charge pattern can be created to enable fine control of fluid motion in microfluidic devices. Physical properties of this PAH layer were characterized. The generation of a bi-directional shear flow was demonstrated by using alternating longitudinal surface charge pattern with a single driving force, i.e. an externally applied electric field inside a microchannel.

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Top-emitting organic light-emitting diodes (TOLEDs) employing highly reflective Ag as anode and semitransparent LiF∕Al∕Ag as cathode were fabricated. The hole injection efficiency of Ag anode can be significantly improved with surface modification using a CF4 plasma. With C545T-doped Alq3 emitter, the top-emitting device shows a low turn-on voltage of 2.65V. The optimized microcavity TOLED shows a current efficiency enhancement of 65% and a total outcoupling efficiency enhancement of 35%, compared with a conventional OLED. No color variation was observed in the forward 140° forward viewing cone. Strong dependence of efficiency on Ag cathode thickness was observed, in good agreement with numerical simulations.

Recently, ultrathin crystalline silicon solar cells have gained tremendous interest because they are deemed to dramatically reduce material usage. However, the resulting conversion efficiency is still limited by the incomplete light absorption in such ultrathin devices. In this letter, we propose ultrathin a-Si/c-Si tandem solar cells with an efficient light trapping design, where a nanopyramid structure is introduced between the top and bottom cells. The superior light harvesting results in a 48% and 35% remarkable improvement of the short-circuit current density for the top and bottom cells, respectively. Meanwhile, the use of SiO x mixed-phase nanomaterial helps to provide the maximum light trapping without paying the price of reduced electrical performance, and conversion efficiencies of up to 13.3% have been achieved for the ultrathin tandem cell employing only 8 μm of silicon, which is 29% higher than the result obtained for the planar cell.

Effective intermediate electrode layers comprising of LiF(1nm)∕Ca(25nm)∕Ag(15nm) or LiF(1nm)∕Al(3nm)∕Au(15nm) were studied in stacked organic light-emitting devices (OLEDs). Stacked OLEDs with two identical emissive units consisting of NPB∕Alq3: C545T/BCP exhibited superior luminous efficiency-current density characteristics over conventional single-unit devices. At 20mA∕cm2, the luminous efficiency of the stacked OLEDs using the intermediate layers of LiF∕Ca∕Ag and LiF∕Al∕Au were about 19.6cd∕A and 17.5cd∕A, respectively, almost doubling that of the corresponding control devices, as expected.

Anion exchange reaction is a particularly versatile tool for the synthesis of a large class of nanomaterials. Here we report a low temperature, fast, reversible anion exchange reaction in halide perovskite thin film. Although processed in the solid-state phase, the exchanged hybrid perovskite shows good quality in terms of morphology conservation, phase transformation, and homogeneous composition. The easily exchanged reaction during the crystallization process suggests the robust nature of the Pb–CH3NH3 framework and high diffusion ability of halide ions in the perovskite lattice. Furthermore, we show its application in perovskite solar cells; we find that the anion exchange reaction does not induce any remarkable defects resulting from the lattice transformation and morphology reconstruction. In some case, the beneficial exchange of halide species involving simultaneous displacement reaction and crystallization can be used to improve the perovskite solar cell performance. Our work provides new physical insight into understanding the perovskite formation mechanism and the ionic behavior in the perovskite.

Recently, polycrystalline silicon (p-Si) has been demonstrated to be an efficient anode for organic light-emitting diode (OLED) [X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong, and H. S. Kwok, Appl. Phys. Lett. 87, 083504 (2005)]. In this letter, we show that, by depositing an ultrathin vanadium pentoxide (V2O5) layer on the p-Si anode, the performance of the OLED can be greatly improved. Detailed x-ray photoelectron spectroscopy study shows that strong band bending occurs at the p-Si∕V2O5 interface, leading to much stronger hole injection. This modified p-Si anode can be integrated with the active p-Si layer of thin-film transistors in active-matrix OLED displays.