Aggregation greatly boosts emission efficiency of the silole, turning it from a weak luminophor into a strong emitter.

We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.

Two new conjugated polymers have been designed and synthesized for polymer solar cells. Both of them exhibit excellent photovoltaic properties with a power conversion efficiency as high as 4.74%. Different from the traditional linear donor-acceptor (D-A) type conjugated polymers, these newly designed polymers have a two-dimensional conjugated structure with their tunable acceptors located at the end of D-A side chains and connected with the donors on the main chain through an efficient pi-bridge. This approach provides great flexibility in fine-tuning the absorption spectra and energy levels of the resultant polymers for achieving high device performance.

No abstract

We report broad bandwidth, 0.1-10 THz time-domain spectroscopy of linear and electro-optic polymers. The common THz optical component materials high-density polyethylene, polytetrafluoroethylene, polyimide (Kapton), and polyethylene cyclic olefin copolymer (Topas) were evaluated for broadband THz applications. Host polymers polymethyl methacrylate, polystyrene, and two types of amorphous polycarbonate were also examined for suitability as host for several important chromophores in guest-host electro-optic polymer composites for use as broadband THz emitters and sensors.

Extensive experimental and theoretical study suggests that interchromophore electrostatic interactions are among the most severe impediments to the induction and stability of large electro-optic coefficients in electric-field-poled organic materials. In this report, multichromophore-containing dendritic materials have been investigated as a means to minimize unwanted attenuation of nonlinear optical (electro-optic) activity at high chromophore loading. The dendritic molecular architectures employed were designed to provide optimized molecular scaffolding for electric-field-induced molecular reorientation. Design parameters were based upon past experimental results in conjunction with statistical and quantum mechanical modeling. The electro-optic behavior of these materials was evaluated through experimental and theoretical analysis. Experimental data collected from the dendrimer structures depict a reasonably linear relationship between chromophore number density (N) and electro-optic activity (r(33)) demonstrating a deviation from the dipolar frustration that typically limits r(33) in conventional chromophore/polymer composite materials. The observed linear dependence holds at higher chromophore densities than those that have been found to be practical in systems of organic NLO chromophores dispersed in polymer hosts. Theoretical analysis of these results using Monte Carlo modeling reproduces the experimentally observed trends confirming linear dependence of electro-optic activity on N in the dendrimer materials. These results provide new insight into the ordering behavior of EO dendrimers and demonstrate that the frequently observed asymptotic dependence of electro-optic activity on chromophore number density may be overcome through rational design.

Although gigahertz-scale free-carrier modulators have been demonstrated in silicon, intensity modulators operating at terahertz speeds have not been reported because of silicon's weak ultrafast nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer waveguide device, based on the all-optical Kerr effect-the ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the mechanism of this modulation is ultrafast through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained. By integrating optical polymers through evanescent coupling to silicon waveguides, we greatly increase the effective nonlinearity of the waveguide, allowing operation at continuous-wave power levels compatible with telecommunication systems. These devices are a first step in the development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

No abstract