Cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of currentvoltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases VOC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance.
We have used different molybdenum disulfide (MoS2) nanoparticle concentrations (0~10 wt%) for doping the hybrid active P3HT:PCBM layer. The root mean square (rms) roughness of the layer increased as the MoS2 nanoparticle concentration increased. The hybrid film with MoS2 has higher absorption intensity than the pristine film. The maximum power conversion efficiency (PCE) was 2.73% with 5 wt% MoS2 concentration, higher than that (2.08%) obtained without MoS2.
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