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We apply a systematic approach to identify a highk/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

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SEMATECH 2706 Montopolis Drive, Austin, TX 78741 1. IBM assignee, 2. Ti assignee, and 3. Freescale assignee ABSTRACT If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/<110> nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an I on of 930µA/µm and 680µA/µm for nMOSFETs and pMOSFETs without implementing any other stress engineering process.