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High-frequency small-signal capacitances of semiconductor junction vs temperature, from the initial conditions of filled and emptied traps in the junction depletion region, are used to determine the trap concentration and the thermal activation energies of trapped electrons and holes. Illustrations are given for silicon N + P diodes doped with gold impurity or irradiated with 1-MeV electrons, showing the room-temperature annealing for the latter.

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The general theory of the high frequency capacitance transient for an initially depleted surface space charge layer with nonuniform distribution of bulk recombination centers is reduced to the forms suitable for determination of the spatial distribution of the recombination center concentration and the electric field dependences of the majority and minority carrier emission rates of the centers. Examples of gold diffused and control MOS capacitors (without gold diffusion) on n‐type and p‐type silicon are presented as illustrations.

The general theory of high frequency capacitance and current transients under arbitrary applied voltage transient is developed which includes both surface states and nonuniform spatial distribution of bulk generation-recombination centers. It is then applied to the special case of initially depleted surface without surface states and with a constant bulk center concentration. Experimental examples are given using gold doped Si devices to illustrate the evaluation of the concentrationg of the gold centers and majority shallow level impurity and of the thermal emission rates of trapped electrons and holes a t the gold centers in the surface space charge layer.Eine allgemeine Theorie der Hochfrequenzkapazitanz und der Bnderung des Stromes als Funktion der Zeit bei Anlegen einer beliebigen, zeitabhangigen Vorspannung wird abgeleitet. Sie berucksichtigt sowohl Oberflachenenergieniveaus als auch eine raumliche Verteilung der Generations-Rekombinationszentren im Innern des Kristalls. Die Theorie wird dann auf den speziellen Ball der ursprunglich von Ladungstragern entleerten Oberflache ohne Oberflachenenergieniveaus mit einer konstanten Konzentration der Generations-Rekombinationszentren im Innern des Kristalls angewandt. Als experimentelles Beispiel wird die Konzentration der Goldzentren, die Konzentration der flachen Verunreinigungen und die thermischen Emissionsraten von Elektronen und Lochern, die im Raumladungsbereich an der Oberflache in Goldzentren eingefangen sind, bostimmt.

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The time dependence of hot carrier degradation of n-channel MOSFETs and the methodology of accelerated stress have been investigated in detail. The time (T) dependence is foLund to be inconsistent with the simple expression of TN (N 0.25 ), but rather slhow a slow-down of the degradation rate. The slope of the degradation curve is also found to be dependent on the stress bias voltage. The projection of device lifetime by accelerated stress based on the TN law and the assumption of constant slope independent of stress bias is unreliable.