Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer

Abstract

The general theory of the high frequency capacitance transient for an initially depleted surface space charge layer with nonuniform distribution of bulk recombination centers is reduced to the forms suitable for determination of the spatial distribution of the recombination center concentration and the electric field dependences of the majority and minority carrier emission rates of the centers. Examples of gold diffused and control MOS capacitors (without gold diffusion) on n‐type and p‐type silicon are presented as illustrations.

Thermal ionization rates and energies of holes at the double acceptor zinc centers in silicon

“…The difference between the two AC curves, AC( V,, t ) -AC ( V , + AV, t ) , then gives the thermal emission rate of holes trapped in the region x1 2 x 5 x1 + Ax which corresponds to 11 well defined field interval, E (x, + Ax) 5 %,(x) E(x,). This technique is particularly simple to use for the capacitance transient if N T T < N, and both ~V T T and N , are independent of position [17]. These conditions are approximately satisfied in the samples studied in this paper.…”

The Pulsed MIS Capacitor. A Critical Review

“…It is assumed that the time rate of change of the interface trapped charge plays a negligible role in the capacitance transient. Similarly a rearrangement of the charge on bulk generation/recombination centers is assumed to take place in a time that is negligibly small in comparison to the C-t transient [26].…”

“…Heiman used a simplified C-t analysis, in which only bulk scr generation was considered. The governing equation is very similar to (26), but simplified to C,/C -1 Differentiating (32) with respect to t gives (1 -ClC,) C2n,…”

“…Nevertheless, i t cannot be eliminated entirely and will play a role. There is further the complication of transient thermal emission from surface and bulk states as they change their occupancy in response to the voltage step [26]. Because it does not employ the usual slope/intercept technique, it is not possible to separate the surface from the bulk component.…”

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

“…More interesting however are the depletion characteristics which are relatively easy to observe and there are two distinctly different curves depending on whether the gold centers are in the positive or neutral charge state in the surface depletion region. (8,9) The low^r curve corresponds to the case where the gold is in the positive charge state which is observed by accumulating the surface ; or drawing holes to the surface with a negative gate potential^and then applying an increasing positive potential. Following this the gold centers are either allowed to emit holes concentration.…”