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Articles you may be interested inInterface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxidesemiconductor field effect transistor Appl. Phys. Lett. 98, 103513 (2011); 10.1063/1.3559223 Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Sinitride/ Si O 2 stack gate dielectrics J. Appl. Phys. 103, 084512 (2008); 10.1063/1.2907768Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices Appl.A study on the capacitance-voltage characteristics of metal-Ta 2 O 5 -silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor field-effect transistors

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Surface voltage and surface photovoltage measurements have become important semiconductor characterization tools, largely because of the availability of commercial equipment and the contactless nature of the measurements. The range of the basic technique has been expanded through the addition of corona charge. The combination of surface charge and illumination allows surface voltage, surface barrier height, flatband voltage, oxide thickness, oxide charge density, interface trap density, mobile charge density, oxide integrity, minority carrier diffusion length, generation lifetime, recombination lifetime and doping density to be determined. In this review I shall briefly review the history of surface voltage, then discuss the principles of the technique and give some examples and applications.

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A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals. We also find from P diffusion, Ar ion implantation, and Ni film gettering performed as a function of temperature, there exists an optimum gettering temperature. From a comprehensive discussion of the existing models, we conclude that neither the enhanced metal solubility nor the silicon interstitial model explains our experimental results. Furthermore, it is shown that generation of dislocations is not a prerequisite for effective gettering. A model, based on the segregation of impurities at high temperatures and on the release/diffusion of metallic impurities at lower temperatures, is proposed to explain all of our results. A general form of the segregation coefficient has been developed using an extended concept of solid solubility.