<i>Semiconductor Material and Device Characterization</i>

Schroder, D.K.; Rubin, Lawrence G.

doi:10.1063/1.2810086

Cited by 996 publications

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“…First, strain modulates the conductance not only at the CNP, but at all doping levels; a large piezo-resistive response is observed at the CNP only because black phosphorus is least conductive there. Second, the fieldeffect mobility of the carriers, , which is given by the slope of the away from the CNP 30 , is not affected by strain. Indeed, remains at on the hole side and at on the electron side for all accessible strain values in our study (Fig.…”

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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Zhang¹,

et al. 2017

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Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus 1 5 , the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit 3,6 8 . Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.Under mechanical strain, the deformation of the atomic lattice is able to induce profound changes in the electronic structure of a crystalline material. This is best exemplified in doped silicon, where strain alters the energy bands of electron or hole carriers; the transfer of carriers to bands with small effective mass leads to drastic enhancement of carrier mobility (and thus conductivity) 9 13 . Strained silicon is, therefore, able to provide improved switching performance as the transistor dimension is aggressively scaled down in modern electronics 14,15 . Meanwhile, the large resistance response under strain has enabled the development of a myriad of silicon-based transducers 16 , such as strain and torque gauges, that are widely used in industrial applications. Page 3 of 17Black phosphorus, a two-dimensional (2D) material with a puckered honeycomb lattice, offers new possibilities. The puckered lattice in a monolayer, shown in Fig. 1a, can be viewed as rows of two orthogonally coupled hinges along the zigzag direction 17 . The structure makes black phosphorus a soft, and yet mechanically resilient, material that can withstand large strain modulation 18 . More importantly, deformation of the puckers under strain changes the configuration of pz orbitals near the band edges 19 ; modulating the black phosphorus bandgap (and therefore its material properties) via strain becomes a possibility. Indeed, it has been shown that a moderate high pressure of ~1.2 GPa can close the bandgap, and raise the conductance by one order of magnitude at room temperature 20 ; modulation of the optical properties was also observed in corrugated black phosphorus sheets 21 . Those studies hinted at strain as a powerful tool to modulate the electronic and optical properties of black phosphorus.Here, we observe a large piezo-resistive effect in black phosphorus FETs at room temperature. The piezo-resistive response (defined as the relative change in sample resistance, , at a given strain, ) varies with the gate doping, and reac...

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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Zhang¹,

et al. 2017

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“…The measured VBD values were sorted in ascending order for statistical analysis, and then the cumulative failure probability (FBD) against VBD was characterized by Weibull plots. 36 BN present study 7 be described using the Weibull plot parameters. Each fit line is described by the following equation, ln (-ln (1 -FBD) ) =  ln ( VBD ) - ln  where  corresponds to the VBD at which 63.2% of samples fail, and  is the slope of the line, which characterizes the degree of VBD variation (uniformity) and determines the failure mode classification that is widely used in reliability engineering.…”

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“…In general,  < 1 indicates extrinsic breakdown caused by extrinsic defects (B-mode breakdown) as well as early failure (A-mode breakdown). 25,36 Therefore,  > 1 (C-mode breakdown) is required in terms of reliability because this mode represents the intrinsic nature of the dielectric. In this study, the  values for 11-nm, 16-nm, and 22-nm BN were estimated to be 23, 19, and 13, respectively, reflecting intrinsic breakdown.…”

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Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

Hattori

Taniguchi²,

Watanabe³

et al. 2014

ACS Nano

187

218

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Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ~12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. Based on these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.

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“…In samples where it is suspected the existence of contact resistance it is very usual to use the technique known as Transfer Length Method (TLM) 4,5,12 to measure it and also to find the sample resistance. This technique implies defining several contacts, usually by lithography.…”

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A robust method to determine the contact resistance using the van der Pauw set up

et al. 2017

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The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the influence of the contact size, nonuniformities and other second order effects. In this paper we will develop a simple methodology to evaluate the error produced by finite size contacts, detect the presence of contact resistance, calculate it for each contact, and determine the linear or rectifying behavior of the contact. We will also calculate the errors produced by the use of voltmeters with finite input resistance in relation with the sample sheet resistance.

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Semiconductor Material and Device Characterization

Cited by 996 publications

References 0 publications

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

A robust method to determine the contact resistance using the van der Pauw set up

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