Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states

Sah, C. T.; Fu, Horng-Sen

doi:10.1002/pssa.2210110131

Cited by 61 publications

(6 citation statements)

References 32 publications

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“…Our opinion is that the deviations from the expected behavior pattern can be generally ascribed to the conditions assumed which imply the immobility of the minority carriers (17)(18). However, under low measurement frequencies, the mobile minority carriers produce a series of screening effects.…”

Section: Resultsmentioning

confidence: 89%

High Frequency Capacitance Characteristics of the Thin‐Based MOS Electrode

Anastopoulos

Nikitas

Jannakoudakis

1984

J. Electrochem. Soc.

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The differential capacity characteristics of the MOS electrode with very thin (< 0.4 ~m) semiconductor substrate are studied under high measurement frequencies. Model equations for the electric field, the differential space-charge capacitance, and the gate voltage are derived and numerically solved. The capacitance-voltage characteristics show that the formation of the depletion layer is limited by the thickness of the substrate. The absence of the contribution of minority carriers reveals the potential region corresponding to the formation of the depletion layer. The inversion and the depletion layers are found to coexist for a range of gate voltage values. Conclusions are drawn relative to the doping level, the oxide, and the substrate thickness for practical applications of the MOS electrode in electrochemical systems.The study of the thin film metal-insulator-semiconductor (MIS) arrangements is currently dealing with the fabrication of the corresponding systems and the recording of their I-V characteristics (1-6). Special attention is paid to the nature of the dielectric layer which is deposited with various techniques on the semiconductor base (5-6).The research work on the MIS structures has mainly advanced to the direction of the use of thin film metaloxide-semiconductor (MOS) capacitors as variable reactors, but it has not dealt with the possibility of using such systems with a very thin semiconductor base (< 0.4 ~m) in the form of electrodes in electrochemical cells. In our opinion, the use of such electrodes has a considerable interest in electrochemical applications, and this is supported by the findings of recent works on similar systems as oxide-electrolyte and metal-oxide-electrolyte systems (7-8).A part of the research performed in our laboratory is directed towards the theoretical study of the thin-based (< 0.4 ~m) MOS-electrolyte system undeT various conditions regarding the polarization, the semiconductor characteristics, and the chemical composition of the solution, etc.In a preceding publication (9), we studied the C-V characteristics of a MOS system with a p-type thin (< 0.4m) base, under low measurement frequencies. However, due to the fact that a situation quite frequently encountered in practice in electrochemical applications of semiconductors is that of medium and high frequencies, we have attempted in this work to obtain model equations for the space-charge density, the differential capacitance, and the gate voltage of a thin-based MOS structure under these conditions. The equations derived are numerically solved for a series of base thicknesses ranging from 0.1 to 0.3 ~m and for a set of physical simulation parameters. On the basis of the results obtained, we come to a series of practical conclusions which are outlined at the end of this work.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-05-26 to IP

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Section: Resultsmentioning

confidence: 89%

High Frequency Capacitance Characteristics of the Thin‐Based MOS Electrode

Anastopoulos

Nikitas

Jannakoudakis

1984

J. Electrochem. Soc.

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“…More interesting however are the depletion characteristics which are relatively easy to observe and there are two distinctly different curves depending on whether the gold centers are in the positive or neutral charge state in the surface depletion region. (8,9) The low^r curve corresponds to the case where the gold is in the positive charge state which is observed by accumulating the surface ; or drawing holes to the surface with a negative gate potential^and then applying an increasing positive potential. Following this the gold centers are either allowed to emit holes concentration.…”

Section: Experimental Results -Mos Capacitormentioning

confidence: 99%

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

Forbes¹

1975

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has been observed and characterized using the gold acceptor level and gold donor level in the near infrared wavelength range from 1.0 to 3.0 microns. It will be shovrt from pulsed capacitance measurements on MOS capacitors and from measurement of the IRFET response that the characteristics of the gold impurity center in the surface space charge region correspond to the results observe| previously for the center in bulk silicon. Operation of the IRFE can then be described on the basis of a simple model where the change in charge state of the impurity cente r in the surface space charge region due to photoionization modulates the threshold voltage of the MOSFET and thus conductance of the device. The IRFET has a very high gain and responsivities of 10 milliwatts/tnicrojoule are easily achieved. Standard silicon MOSFET technology is employed and it should be possible to use other impurity centers to extend the response out to a wavelength of 14 microns. Applications in large scale integrated infrared imaging and target tracking arrays are anticipated. Unclassified SECUBITY CLASSIFICATION OF THIS PAGEflWl«! O.i» Fn'...

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“…In the course of the considerations concerning physical processes, bulk-limited processes of emission and generation through bulk imperfections were ignored. The bulk processes are expected to prevail in devices formed on properly doped substrates (Sah and Fu 1972). According to Sah and Fu (1972), in the case of a single deep trap level the emission process gives rise to an exponential transient.…”

Section: Discussionmentioning

confidence: 99%

“…The bulk processes are expected to prevail in devices formed on properly doped substrates (Sah and Fu 1972). According to Sah and Fu (1972), in the case of a single deep trap level the emission process gives rise to an exponential transient. This situation allows an analysis of DLTCS similar to that presented by Hurtes et a1 (1978).…”

Section: Discussionmentioning

confidence: 99%

“…This situation allows an analysis of DLTCS similar to that presented by Hurtes et a1 (1978). As to the bulk generation process, it follows from an exact analysis (Sah and Fu 1972), that there is no formula which would explicitly relate the isothermal transient current of an MOS device to time. Another serious complication arises from the fact that the width of the depletion region when generation begins is not known from the current transient measurements.…”

Section: Discussionmentioning

confidence: 99%

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Deep-level transient current spectroscopy applied to MIS devices

Thurzo

Jakubovie

1981

J. Phys. D: Appl. Phys.

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Deep-level transient current spectroscopy (DLTCS) as an alternative of the well-known DLTS capacitive method is suggested to analyse electronic relaxation phenomena in metal-insulator-semiconductor (MIS) structures. The DLTCS spectra of Al-SiO2-Si diodes are compared with those obtained using the thermal dielectric relaxation current (TDRC) technique. Attempts are presented to estimate the interface states density distribution throughout the band-gap of the semiconductor.

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Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states

Cited by 61 publications

References 32 publications

High Frequency Capacitance Characteristics of the Thin‐Based MOS Electrode

High Frequency Capacitance Characteristics of the Thin‐Based MOS Electrode

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

Deep-level transient current spectroscopy applied to MIS devices

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