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In this work we report the observation and characterization of a hysteresis phenomenon in the transfer characteristics of n-channel polycrystalline silicon ͑poly-Si͒ thin-film transistors ͑TFTs͒. Such phenomenon is observed in devices with fully depleted channel and not treated with hydrogen-related anneal. The origin of the hysteresis is identified to be related to the electron trapping and detrapping processes associated with the deep-level traps in the grain boundaries of the poly-Si channel.