Electronic skin (e-skin) has brought us great convenience and revolutionized our way of life. However, due to physical or chemical aging and damage, they will inevitably be degraded gradually with practical operation. The emergence of self-healing materials enables e-skins to achieve repairment of cracks and restoration of mechanical function by themselves, meeting the requirements of the era for building durable and self-healing electronic devices. This work reviews the current development of self-healing e-skins with various application scenarios, including motion sensor, human–machine interaction and soft robots. The new application fields and present challenges are discussed; meanwhile, thinkable strategies and prospects of future potential applications are conferenced.
In this paper, a fabrication technique of Si 0.5 Ge 0.5 Fin for the high mobility channel FinFET device is systematically investigated. Although the shallow trench isolation (STI) densification temperature is already reduced from 1050 °C to 850 °C, the Si 0.5 Ge 0.5 Fin with the STI annealing first approach still suffers from thermal instability and micro trench issue. It is no possible to further reduce the STI densification temperature using the traditional furnace annealing for the Si 0.5 Ge 0.5 Fin, because the STI densification process of 750 °C also faces the same issue with an unacceptable STI wet etching rate. Thus, a spike annealing of 1050 °C is employed to maintain Si 0.5 Ge 0.5 Fin stability and render the STI etching rate acceptable. The spike annealing treated Si 0.5 Ge 0.5 Fin maintains a better profile than the furnace annealing sample, but it still faces the micro trench issue after the STI recess. This is because the Si 0.5 Ge 0.5 Fin is already oxidized and SiGeO x has a higher etching rate than STI oxide. Finally, a novel STI recess first process with an extra SiN capping is developed to solve both the thermal instability and the micro trench issue, and a minor Si 0.5 Ge 0.5 Fin loss with sharp Si 0.7 Ge 0.3 SRB/Si 0.5 Ge 0.5 interfaces for the STI last scheme is realized by utilizing this novel STI recess first process.
BackgroundFalls and fall-related injuries are not uncommon among older adults and may lead to serious health deterioration and decreased quality of life. Numerous types of physical activity have been proposed to improve balance and strength in older adults with varying degrees of success. Nintendo's Wii Fit video exergame uses body movement as a game controller and provides real-time feedback for games designed to enhance balance and muscle strength. However, whether Wii Fit exercise improves the balance and lower limb muscle strength of older adults remains uncertain.ObjectiveTo evaluate the current literature by using meta-analyses to assess whether Wii Fit exercise is associated with improved balance and lower limb muscle strength in older adults.MethodsWe searched PubMed, EMBASE, Web of Science, China National Knowledge Infrastructure, and Wanfang Data from inception to February 16, 2022, for relevant studies and conducted a manual search of the literature. Data extraction of the included studies were independently performed by two authors. The methodologic quality of each included study was assessed using the Physical Therapy Evidence Database (PEDro) scale. Meta-analyses were conducted using Review Manager 5.3.ResultsOf 991 articles initially identified, 10 articles (379 participants; aged ≥65 years, range 65–92 years; 188 participants in Wii Fit exercise groups, and 191 participants in control groups), including 8 randomized controlled trials, were assessed in this meta-analysis. The methodologic quality of the included studies evaluated with the PEDro average score was 6.4 and ranged from 5 to 8 points, indicating moderate quality. Compared with no exercise, Wii Fit exercise was associated with significant improved scores on the Berg Balance Scale, which evaluates functional balance (mean difference, 1.38; 95% CI, 0.61–2.16; I2 = 31%; P = 0.0005) and on the Timed Up and Go test, which evaluates static and dynamic balance (standardized mean difference, −0.51; 95% CI,−0.88 to −0.14; I2 = 52%; P = 0.007). However, for the three studies assessed, Wii Fit exercise did not significantly improve scores on the 30-s chair stand test, which evaluates the functional strength and endurance of the lower limb muscles (mean difference, 0.82; 95% CI, −0.14 to 1.77; z = 1.68; P = 0.09).ConclusionsOur findings indicated that Wii Fit exercise is an effective approach to improve functional, static, and dynamic balance among older adults. Additional meta-analyzes with higher numbers of randomized controlled trials are suggested to confirm the benefits of Wii Fit exercise on balance in older adults, to establish whether functional strength and endurance of lower limb muscles are improved, and to explore the relationship between improved balance and fall prevention in this population.
In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented. A high crystal quality of four-period stacked SiGe/Si multilayer epitaxial grown with the thickness of each SiGe layer less than 10 nm is realized on a Si substrate without any structural defect impact by optimizing its epitaxial grown process. Meanwhile, the Ge atomic fraction of the SiGe layers is very uniform and its SiGe/Si interfaces are sharp. Then, a vertical profile of the stacked SiGe/Si Fin is achieved with HBr/O2/He plasma by optimizing its bias voltage and O2 flow. After the four-period vertically stacked SiGe/Si Fin structure is introduced, its FinFET device is successfully fabricated under the same fabrication process as the conventional SiGe FinFET. And it attains better drive current Ion, subthreshold slope (SS) and Ion/Ioff ratio electrical performance compared with the conventional SiGe channel FinFET, whose Fin height of SiGe channel is almost equal to total thickness of SiGe in the four-period stacked SiGe/Si channel FinFET. This may be attributed to that the four-period stacked SiGe/Si Fin structure has larger effective channel width (Weff) and may maintain a better quality and surface interfacial performance during the whole fabrication process. Moreover, Si channel of the stacked SiGe/Si channel turning on first also may have contribution to its better electrical properties. This four-period vertically stacked SiGe/Si channel FinFET device has been demonstrated to be a practical candidate for the future technology nodes.
One key component in text-to-SQL is to predict the comparison relations between columns and their values. To the best of our knowledge, no existing models explicitly introduce external common knowledge to address this problem, thus their capabilities of predicting comparison relations are limited beyond training data. In this paper, we propose to leverage adjective-noun phrasing knowledge mined from the web to predict the comparison relations in text-to-SQL. Experimental results on both the original and the re-split Spider dataset show that our approach achieves significant improvement over state-of-the-art methods on comparison relation prediction.
Competitive cognition dynamics are widespread in modern society, especially with the rise of information-technology ecosystem. While previous works mainly focus on internal interactions among individuals, the impacts of the external public opinion environment remain unknown. Here, we propose a heuristic model based on co-evolutionary game theory to study the feedback-evolving dynamics of competitive cognitions and the environment. First, we show co-evolutionary trajectories of strategy-environment system under all possible circumstances. Of particular interest, we unveil the detailed dynamical patterns under the existence of an interior saddle point. In this situation, two stable states coexist in the system and both cognitions have a chance to win. We highlight the emergence of bifurcation phenomena, indicating that the final evolutionary outcome is sensitive to initial conditions. Further, the attraction basins of two stable states are not only influenced by the position of the interior saddle point but also affected by the relative speed of environmental feedbacks.
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