Layered black phosphorus has been attracting great attention due to its interesting material properties which lead to a plethora of proposed applications. Several approaches are demonstrated here for covalent chemical modifications of layered black phosphorus in order to form P-C and P-O-C bonds. Nucleophilic reagents are highly effective for chemical modification of black phosphorus. Further derivatization approaches investigated were based on radical reactions. These reagents are not as effective as nucleophilic reagents for the surface covalent modification of black phosphorus. The influence of covalent modification on the electronic structure of black phosphorus was investigated using ab initio calculations. Covalent modification exerts a strong effect on the electronic structure including the change of band-gap width and spin polarization.

The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N 2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

The role of Si during the metal-organic vapor phase epitaxy of GaN rods is investigated. Already a small amount of Si strongly enhances the vertical growth of GaN. Reactive ion etching experiments show that the inner volume of the rod is much more strongly etched than the m-plane surface layer. Transmission electron microscopy and energy dispersive X-ray spectroscopy measurements reveal that Si is predominiantly incorporated in the surface layer of the m-plane sidewall facets of the rods. The formation of a SiN layer prevents growth on and etching of the m-planes and enhances the mobility of atoms promoting vertical growth. Annealing experiments demonstrate the extraordinary thermal resistivity in comparison to undoped GaN rod structures and GaN layers. The subsequent InGaN quantum well growth on the GaN rods reveals the antisurfactant effect of the SiN layer. A model based on the vapor-liquid-solid growth mode is proposed. The results help to understand the role of Si during growth of GaN rod structures to improve the performance of rod based light emitting and electronic devices

We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger-Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.

We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution and gate action. The effective electrostatic gate width and screening effects are taken into account. A pivotal aspect is that the gate coupling to the nanowire is compromised by the concurrent coupling of the gate electrode to the surface/interface states, which provide the vast majority of carriers for undoped nanowires. In conjunction with field-effect transistor (FET) measurements using two gates with distinctly dissimilar couplings, the study reveals the density of surface states that gives rise to a shallow quantum well at the surface. Both gates yield identical results for the electron concentration and mobility only at the actual surface state density. Our method remedies the flaws of conventional FET analysis and provides a straightforward alternative to intricate Hall effect measurements on nanowires.

We investigated the magnetotransport of InAs nanowires grown by selective-area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation in the magnetic field or the backgate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l is determined. At the lowest temperatures l is found to be at least 300 nm while for temperatures exceeding 2 K a monotonous decrease in l with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's-function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling.

We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junctions with high doping concentrations in the nanowire Josephson supercurrent values up to 100 nA are found. Owing to the use of Nb as superconductor the Josephson coupling persists at temperatures up to 4 K. In all junctions the critical current monotonously decreased with the magnetic field, which can be explained by a recently developed theoretical model for the proximity effect in ultra-small Josephson junctions. For the low-doped Josephson junctions a control of the critical current by varying the gate voltage has been demonstrated. We have studied conductance fluctuations in nanowires coupled to superconducting and normal metal terminals. The conductance fluctuation amplitude is found to be about 6 times larger in superconducting contacted nanowires. The enhancement of the conductance fluctuations is attributed to phase-coherent Andreev reflection as well as to the large number of phase-coherent channels due to the large superconducting gap of the Nb electrodes.

In the present paper, studies on the state of strain in single and ensembles of nanocolumns investigated by photoluminescence spectroscopy will be presented. The GaN nanocolumns were either grown in a bottom-up approach or prepared in a top-down approach by etching compact GaN layers grown on Si(111) and sapphire (0001) substrates. Experimental evidence for strain relaxation of the nanocolumns was found. The difference and development of the strain value for different nanocolumns could be verified by spatially resolved micro-photoluminescence on single nanocolumns separated from their substrate. A common D0X spectral position at 3.473 eV was found for all separated single GaN nanocolumns independent of the substrate or processing technique used, as expected for a relaxed system.