Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires

Blömers, Christian; Rieger, Torsten; Zellekens, Patrick; Haas, Fabian; Lepsa, Mihail Ion; Hardtdegen, H.; Gül, Önder; Demarina, N. V.; Grützmacher, Detlev; Lüth, H.; Schäpers, Thomas

doi:10.1088/0957-4484/24/3/035203

Cited by 54 publications

(82 citation statements)

References 27 publications

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“…The WAL/WL effect in the diffusive regime was analyzed by Kettemann [32] and Wenk [33,34] for planar quantum wires with a zinc-blende lattice. In our preceding article [14], we developed a model for diffusive zinc-blende nanowires where the transport is governed by surface states, which occurs in materials with Fermi level surface pinning [12,25,30,35,36] or core/shell nanowires [26].…”

Section: Introductionmentioning

confidence: 99%

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

et al. 2017

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We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies.

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Section: Introductionmentioning

confidence: 99%

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

et al. 2017

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“…This provides a possibility to achieve thin tubular shells surrounding a core nanowire or other shells. One of the advantages of these systems is a possibility to establish band alignment through the thicknesses of the components [2][3][4] and thus grow structures in which electrons are confined only in narrow shell areas [5,6]. Moreover, the core part may be etched such that separated nanotubes are formed [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Most commonly CSNs have hexagonal cross-sections [6][7][8], but triangular [9,10] and circular [11] systems have also been achieved. Electrons confined in prismatic CSNs may form conductive channels along the sharp edges [2,[12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Conductance oscillations of core-shell nanowires in transversal magnetic fields

et al. 2016

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We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of vanishing radial component of the magnetic field, manifest their existence. In the strong coupling regime they induce flux periodic, Aharonov-Bohm-like, conductance oscillations, which, by decreasing the coupling to the leads, evolve into well resolved peaks. The flux periodic oscillations arise due to interference of the snaking states, which is a consequence of backscattering at either the contacts with leads or magnetic/potential barriers in the wire.

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“…Such confinement effects have been experimentally observed both for thin InAs layers on GaAs substrates 34 and for GaAs/InAs core/shell NWs. 5 In addition, the band gap of the InAs shell as well as that of the GaAs core close to the heterointerface will be significantly influenced by strain due to the large lattice misfit between the two materials. 35,36 We calculated the strain distribution of our GaAs/InAs core/shell NWs, the resulting band alignment around the heterointerface, and the confinement energy for electrons in the InAs shell in terms of linear elasticity theory.…”

Section: Discussionmentioning

confidence: 99%

“…Such a band alignment between GaAs and InAs can be used to fabricate, for example, nanoscale tubular conductors, as reported in Ref. 5. The electronic properties of such high-mobility devices can be correlated with structural properties [6][7][8] and with the quality of the heterointerface.…”

Section: Introductionmentioning

confidence: 91%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires

Cited by 54 publications

References 27 publications

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Conductance oscillations of core-shell nanowires in transversal magnetic fields

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

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